Antiferromagnetic coupling driven by bond length contraction near the Ga1-xMnxN film surface

Q. Wang; Q. Sun; P. Jena; Y. Kawazoe

doi:10.1103/PhysRevLett.93.155501

Antiferromagnetic coupling driven by bond length contraction near the Ga_1-xMn_xN film surface

Q. Wang, Q. Sun, P. Jena, Y. Kawazoe

New Industry Creation Hatchery Center (NICHe)

Virginia Commonwealth University

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

The magnetic properties of Ga_1-xMn_xN in both bulk and thin film forms were studied. It was shown that Mn atoms, which couple ferromagnetically in bulk Ga_1-xMn_xN, couple antiferromagnetically on its surface. First principles calculations based on density functional theory were used for the purpose of analysis. It was found that the change in magnetic behavior is brought about by a contraction of the Mn-Mn and Mn-N bond lengths.

Original language	English
Article number	155501
Pages (from-to)	155501-1-155501-4
Journal	Physical Review Letters
Volume	93
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevLett.93.155501
Publication status	Published - 2004 Oct 8

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10.1103/PhysRevLett.93.155501

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title = "Antiferromagnetic coupling driven by bond length contraction near the Ga1-xMnxN film surface",

abstract = "The magnetic properties of Ga1-xMnxN in both bulk and thin film forms were studied. It was shown that Mn atoms, which couple ferromagnetically in bulk Ga1-xMnxN, couple antiferromagnetically on its surface. First principles calculations based on density functional theory were used for the purpose of analysis. It was found that the change in magnetic behavior is brought about by a contraction of the Mn-Mn and Mn-N bond lengths.",

author = "Q. Wang and Q. Sun and P. Jena and Y. Kawazoe",

note = "Funding Information: The work was supported in part by a grant from the Office of Naval Research. The authors thank the crew of the Center for Computational Materials Science, the Institute for Materials Research, Tohoku University, for their continuous support of the HITAC SR8000 supercomputing facility.",

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AU - Jena, P.

AU - Kawazoe, Y.

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N2 - The magnetic properties of Ga1-xMnxN in both bulk and thin film forms were studied. It was shown that Mn atoms, which couple ferromagnetically in bulk Ga1-xMnxN, couple antiferromagnetically on its surface. First principles calculations based on density functional theory were used for the purpose of analysis. It was found that the change in magnetic behavior is brought about by a contraction of the Mn-Mn and Mn-N bond lengths.

AB - The magnetic properties of Ga1-xMnxN in both bulk and thin film forms were studied. It was shown that Mn atoms, which couple ferromagnetically in bulk Ga1-xMnxN, couple antiferromagnetically on its surface. First principles calculations based on density functional theory were used for the purpose of analysis. It was found that the change in magnetic behavior is brought about by a contraction of the Mn-Mn and Mn-N bond lengths.

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Antiferromagnetic coupling driven by bond length contraction near the Ga_1-xMn_xN film surface

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