Abstract
The partitioning of manganese and silicon at the cementite/ferrite interface during the tempering process of Fe-C-Si-Mn martensite has been studied by atom probe field ion microscopy. The results from early stages of tempering indicate that cementite can form without partitioning of silicon and manganese and appears to be controlled by carbon diffusion in the matrix. The onset of a significant redistribution of both silicon and manganese occurs after extended tempering. Two-step tempering led to extensive partitioning of manganese and silicon.
Original language | English |
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Pages (from-to) | 321-327 |
Number of pages | 7 |
Journal | Applied Surface Science |
Volume | 67 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1993 Apr 2 |
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films