Abstract
In our previous study, we found that the polymer(s) can be milled and fabricated by a Focused Ion Beam (FIB) method, which would open new possibility for nano-fabrication of polymeric materials in the near future. Thus, a fundamental set of information, e.g. etching rate and degree of penetration of gallium ion in materials during milling ("Ga penetration"), will be required for polymeric materials. In the present study, the two fundamental parameters above were actually measured for (stained) polymeric samples. It turned out that the etching rate for the polymers were similar to that for Si substrate and the Ga ions were penetrated down to ca. 15 nm beneath the milled surface of the polymeric samples.
Original language | English |
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Number of pages | 1 |
Publication status | Published - 2005 Dec 1 |
Externally published | Yes |
Event | 54th SPSJ Annual Meeting 2005 - Yokohama, Japan Duration: 2005 May 25 → 2005 May 27 |
Other
Other | 54th SPSJ Annual Meeting 2005 |
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Country/Territory | Japan |
City | Yokohama |
Period | 05/5/25 → 05/5/27 |
Keywords
- Etching rate
- Focused ion beam
- Transmission electron microscopy
ASJC Scopus subject areas
- Engineering(all)