TY - GEN
T1 - Application of multistep formation during molecular beam epitaxy for fabricating novel nanomechanical structures
AU - Yamaguchi, H.
AU - Hirayama, Y.
N1 - Funding Information:
The authors are grateful to Dr. Sunao Ishihara and Dr. Takaaki Mukai for their encouragement throughout this work. This work was partly supported by the NEDO International Joint Research Program “ Nano-elasticity ”.
Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - The technique of controlling the surface step distributions during molecular beam epitaxy has been widely used in the fabrication of semiconductor low-dimensional structures. In particular, the multistep structures formed via step bunching during growth are frequently applied for the growth of semiconductor quantum wires. This is a clean fabrication technique for semiconductor nanostructures that does not rely on lithographic processes, which often degrade crystalline quality. Here, we demonstrate, for the first time, the application of this "bottom-up" technique to the fabrication of semiconductor nanomechanical structures, which have the potential to bring about a revolution in the application of nanoscale fine-structure devices, such as high-resolution actuators and sensors, high-frequency signal processing components, and medical diagnostic devices.
AB - The technique of controlling the surface step distributions during molecular beam epitaxy has been widely used in the fabrication of semiconductor low-dimensional structures. In particular, the multistep structures formed via step bunching during growth are frequently applied for the growth of semiconductor quantum wires. This is a clean fabrication technique for semiconductor nanostructures that does not rely on lithographic processes, which often degrade crystalline quality. Here, we demonstrate, for the first time, the application of this "bottom-up" technique to the fabrication of semiconductor nanomechanical structures, which have the potential to bring about a revolution in the application of nanoscale fine-structure devices, such as high-resolution actuators and sensors, high-frequency signal processing components, and medical diagnostic devices.
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U2 - 10.1109/MBE.2002.1037888
DO - 10.1109/MBE.2002.1037888
M3 - Conference contribution
AN - SCOPUS:84968626538
T3 - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
SP - 319
EP - 320
BT - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th International Conference on Molecular Beam Epitaxy, MBE 2002
Y2 - 15 September 2002 through 20 September 2002
ER -