Application of picosecond light pulses generated from an AlGaInP visible diode laser for photoluminescence decay measurement of GaAs/AlGaAs quantum wells

H. Yokoyama; H. Iwata; K. Onabe; T. Suzuki

doi:10.1063/1.1139805

Application of picosecond light pulses generated from an AlGaInP visible diode laser for photoluminescence decay measurement of GaAs/AlGaAs quantum wells

H. Yokoyama, H. Iwata, K. Onabe, T. Suzuki

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The photoluminescence decay of GaAs/AlGaAs quantum wells was successfully measured at room temperature by using 660-nm picosecond light pulses from an AlGaInP diode laser driven by short pulse current. Our experimental results reveal that picosecond light pulses from visible diode lasers may be widely applicable, in place of mode-locked gas, solid-state, or dye lasers, for studying the fast carrier recombination properties of many kinds of materials including GaAs and AlGaAs in the wavelength region of deep red to infrared.

Original language	English
Pages (from-to)	663-665
Number of pages	3
Journal	Review of Scientific Instruments
Volume	59
Issue number	4
DOIs	https://doi.org/10.1063/1.1139805
Publication status	Published - 1988
Externally published	Yes

ASJC Scopus subject areas

Instrumentation

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10.1063/1.1139805

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title = "Application of picosecond light pulses generated from an AlGaInP visible diode laser for photoluminescence decay measurement of GaAs/AlGaAs quantum wells",

abstract = "The photoluminescence decay of GaAs/AlGaAs quantum wells was successfully measured at room temperature by using 660-nm picosecond light pulses from an AlGaInP diode laser driven by short pulse current. Our experimental results reveal that picosecond light pulses from visible diode lasers may be widely applicable, in place of mode-locked gas, solid-state, or dye lasers, for studying the fast carrier recombination properties of many kinds of materials including GaAs and AlGaAs in the wavelength region of deep red to infrared.",

author = "H. Yokoyama and H. Iwata and K. Onabe and T. Suzuki",

year = "1988",

doi = "10.1063/1.1139805",

language = "English",

volume = "59",

pages = "663--665",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

publisher = "American Institute of Physics Publising LLC",

number = "4",

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T1 - Application of picosecond light pulses generated from an AlGaInP visible diode laser for photoluminescence decay measurement of GaAs/AlGaAs quantum wells

AU - Yokoyama, H.

AU - Iwata, H.

AU - Onabe, K.

AU - Suzuki, T.

PY - 1988

Y1 - 1988

N2 - The photoluminescence decay of GaAs/AlGaAs quantum wells was successfully measured at room temperature by using 660-nm picosecond light pulses from an AlGaInP diode laser driven by short pulse current. Our experimental results reveal that picosecond light pulses from visible diode lasers may be widely applicable, in place of mode-locked gas, solid-state, or dye lasers, for studying the fast carrier recombination properties of many kinds of materials including GaAs and AlGaAs in the wavelength region of deep red to infrared.

AB - The photoluminescence decay of GaAs/AlGaAs quantum wells was successfully measured at room temperature by using 660-nm picosecond light pulses from an AlGaInP diode laser driven by short pulse current. Our experimental results reveal that picosecond light pulses from visible diode lasers may be widely applicable, in place of mode-locked gas, solid-state, or dye lasers, for studying the fast carrier recombination properties of many kinds of materials including GaAs and AlGaAs in the wavelength region of deep red to infrared.

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JF - Review of Scientific Instruments

IS - 4

ER -

Application of picosecond light pulses generated from an AlGaInP visible diode laser for photoluminescence decay measurement of GaAs/AlGaAs quantum wells

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