Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials

Noritaka Usami; Ryota Nihei; Yukinaga Azuma; Ichiro Yonenaga; Kazuo Nakajima; Kentarou Sawano; Yasuhiro Shiraki

doi:10.1016/j.tsf.2008.08.044

Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials

Noritaka Usami, Ryota Nihei, Yukinaga Azuma, Ichiro Yonenaga, Kazuo Nakajima, Kentarou Sawano, Yasuhiro Shiraki

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We report on combination of crystal growth of bulk SiGe and thin film crystals on SiGe bulk substrates to prepare heterostructures with controlled stain in constituent materials. Muticomponent zone melting method to permit crystal growth with uniform composition and Czochralski growth were employed as growth techniques for SiGe bulk crystals. On homemade SiGe bulk substrates, we realized strained Si thin film as well as luminescent strained quantum wells with improved structural perfection compared with those on relaxed SiGe on commercially available Si.

Original language	English
Pages (from-to)	14-16
Number of pages	3
Journal	Thin Solid Films
Volume	517
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2008.08.044
Publication status	Published - 2008 Nov 3
Externally published	Yes

Keywords

Crystal growth
SiGe bulk crystal
Strained Si

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2008.08.044

Cite this

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title = "Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials",

abstract = "We report on combination of crystal growth of bulk SiGe and thin film crystals on SiGe bulk substrates to prepare heterostructures with controlled stain in constituent materials. Muticomponent zone melting method to permit crystal growth with uniform composition and Czochralski growth were employed as growth techniques for SiGe bulk crystals. On homemade SiGe bulk substrates, we realized strained Si thin film as well as luminescent strained quantum wells with improved structural perfection compared with those on relaxed SiGe on commercially available Si.",

keywords = "Crystal growth, SiGe bulk crystal, Strained Si",

author = "Noritaka Usami and Ryota Nihei and Yukinaga Azuma and Ichiro Yonenaga and Kazuo Nakajima and Kentarou Sawano and Yasuhiro Shiraki",

note = "Funding Information: The authors acknowledge S. Tsujino for the fruitful discussions. This work was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology, and Industrial Technology Research Grant Program from NEDO of Japan.",

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doi = "10.1016/j.tsf.2008.08.044",

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T1 - Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials

AU - Usami, Noritaka

AU - Nihei, Ryota

AU - Azuma, Yukinaga

AU - Yonenaga, Ichiro

AU - Nakajima, Kazuo

AU - Sawano, Kentarou

AU - Shiraki, Yasuhiro

N1 - Funding Information: The authors acknowledge S. Tsujino for the fruitful discussions. This work was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology, and Industrial Technology Research Grant Program from NEDO of Japan.

PY - 2008/11/3

Y1 - 2008/11/3

N2 - We report on combination of crystal growth of bulk SiGe and thin film crystals on SiGe bulk substrates to prepare heterostructures with controlled stain in constituent materials. Muticomponent zone melting method to permit crystal growth with uniform composition and Czochralski growth were employed as growth techniques for SiGe bulk crystals. On homemade SiGe bulk substrates, we realized strained Si thin film as well as luminescent strained quantum wells with improved structural perfection compared with those on relaxed SiGe on commercially available Si.

AB - We report on combination of crystal growth of bulk SiGe and thin film crystals on SiGe bulk substrates to prepare heterostructures with controlled stain in constituent materials. Muticomponent zone melting method to permit crystal growth with uniform composition and Czochralski growth were employed as growth techniques for SiGe bulk crystals. On homemade SiGe bulk substrates, we realized strained Si thin film as well as luminescent strained quantum wells with improved structural perfection compared with those on relaxed SiGe on commercially available Si.

KW - Crystal growth

KW - SiGe bulk crystal

KW - Strained Si

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Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials

Abstract

Keywords

ASJC Scopus subject areas

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