The dependence of tunnel magnetoresistance (TMR) ratio on temperature and applied voltage has been studied for Fe/Al-oxide/Fe and 80NiFe/Al-oxide/Co junctions. Their dependence for an Fe/Al-oxide/Fe junction is greater than that for a 80NiFe/Al-oxide/Co junction. The rapid decrease of TMR ratio with increasing temperature for the Fe/Al-oxide/Fe junction below 100 K or 10 mV and small decrease below about 40 K for the 80NiFe/Al-oxide/Co junction can be explained by the spin flip scattering due to magnetic impurities.
|Number of pages
|Journal of Magnetism and Magnetic Materials
|Published - 1999 Jun 1
|Proceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) - Vancouver, BC, Can
Duration: 1998 Jun 14 → 1998 Jun 19