Ar plasma irradiation effects in atomically controlled Si epitaxial growth

Daisuke Muto, Masao Sakuraba, Takuya Seino, Junichi Murota

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


Effect of Ar plasma on the quality of atomic layer-by-layer Si epitaxial growth on Si(100) is investigated using the electron-cyclotron resonance (ECR) plasma enhanced chemical vapor deposition system. Adsorbed SiH 4 molecules on monohydride Si(100) are effectively decomposed and form Si epitaxial film under the Ar plasma irradiation with the maximum and peak ion energies of 7 and 1-2eV, respectively. As a result, atomic layer-by-layer control of Si epitaxial growth at a lower temperature below 100°C is achieved by alternate exposure of Si(100) to SiH 4 and Ar plasma. The plasma exposure also induces Ar incorporation in the film, and it is suggested that lowering the incorporated Ar amount below 2×10 21 cm -3 is necessary to avoid degradation in crystallinity.

Original languageEnglish
Pages (from-to)210-214
Number of pages5
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2004 Mar 15


  • Electron-cyclotron resonance
  • Plasma enhanced chemical vapor deposition
  • Si epitaxial growth
  • SiH

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Ar plasma irradiation effects in atomically controlled Si epitaxial growth'. Together they form a unique fingerprint.

Cite this