Ar plasma irradiation effects in atomically controlled Si epitaxial growth

Effect of Ar plasma on the quality of atomic layer-by-layer Si epitaxial growth on Si(100) is investigated using the electron-cyclotron resonance (ECR) plasma enhanced chemical vapor deposition system. Adsorbed SiH ₄ molecules on monohydride Si(100) are effectively decomposed and form Si epitaxial film under the Ar plasma irradiation with the maximum and peak ion energies of 7 and 1-2eV, respectively. As a result, atomic layer-by-layer control of Si epitaxial growth at a lower temperature below 100°C is achieved by alternate exposure of Si(100) to SiH ₄ and Ar plasma. The plasma exposure also induces Ar incorporation in the film, and it is suggested that lowering the incorporated Ar amount below 2×10 ²¹ cm ^-3 is necessary to avoid degradation in crystallinity.