Arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump-probe spectroscopy

R. Yano; Y. Hirayama; S. Miyashita; N. Uesugi; S. Uehara

doi:10.1063/1.1602569

Arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump-probe spectroscopy

R. Yano, Y. Hirayama, S. Miyashita, N. Uesugi, S. Uehara

Center for Science and Innovation in Spintronics (CSIS)

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Pump-probe spectroscopy was used to study the arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs. Results showed that a sample grown under a high arsenic pressure has a shorter carrier lifetime for both as-grown and annealed condition. Results also showed that the carrier decay times of samples changed drastically when the annealing temperature was above 550°C.

Original language	English
Pages (from-to)	3966-3971
Number of pages	6
Journal	Journal of Applied Physics
Volume	94
Issue number	6
DOIs	https://doi.org/10.1063/1.1602569
Publication status	Published - 2003 Sept 15

Access to Document

10.1063/1.1602569

Cite this

@article{cd89608f262c4760b5d80a6da4e620cf,

title = "Arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump-probe spectroscopy",

abstract = "Pump-probe spectroscopy was used to study the arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs. Results showed that a sample grown under a high arsenic pressure has a shorter carrier lifetime for both as-grown and annealed condition. Results also showed that the carrier decay times of samples changed drastically when the annealing temperature was above 550°C.",

author = "R. Yano and Y. Hirayama and S. Miyashita and N. Uesugi and S. Uehara",

year = "2003",

month = sep,

day = "15",

doi = "10.1063/1.1602569",

language = "English",

volume = "94",

pages = "3966--3971",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump-probe spectroscopy

AU - Yano, R.

AU - Hirayama, Y.

AU - Miyashita, S.

AU - Uesugi, N.

AU - Uehara, S.

PY - 2003/9/15

Y1 - 2003/9/15

N2 - Pump-probe spectroscopy was used to study the arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs. Results showed that a sample grown under a high arsenic pressure has a shorter carrier lifetime for both as-grown and annealed condition. Results also showed that the carrier decay times of samples changed drastically when the annealing temperature was above 550°C.

AB - Pump-probe spectroscopy was used to study the arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs. Results showed that a sample grown under a high arsenic pressure has a shorter carrier lifetime for both as-grown and annealed condition. Results also showed that the carrier decay times of samples changed drastically when the annealing temperature was above 550°C.

UR - http://www.scopus.com/inward/record.url?scp=0141886921&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141886921&partnerID=8YFLogxK

U2 - 10.1063/1.1602569

DO - 10.1063/1.1602569

M3 - Article

AN - SCOPUS:0141886921

SN - 0021-8979

VL - 94

SP - 3966

EP - 3971

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump-probe spectroscopy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this