Artificial three dimensional oxide nanostructures for high performance correlated oxide nanoelectronics

Hidekazu Tanaka, Hidefumi Takami, Teruo Kanki, Azusa N. Hattori, Kohei Fujiwara

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We report a strategy for controlling nanoscopic electronic domains to produce gigantic Mott metal-insulator transition phenomena in strongly correlated oxides by fabricating oxide micro-nano-wires, nanowalls, nanoboxes. We investigated the dependence of spatial dimensionality on wire width for a disordered configurations of metallic domains in VO2 microwires to nanowires on TiO2(001) and Al2O3(0001) substrates with well-positioned alignment by a nanoimprint (NIL) technique. We observed a temperature-induced steep multistep metal-insulator transition in artificial VO2 micro/nano-wires. With further development, we report a new bottom-up fabrication method for the formation of extremely small transition-metal oxide nanostructures employing a combination of NIL and pulsed laser deposition (PLD) techniques, called the three-dimensional nanotemplate-PLD method, to demonstrate functional oxide nanowall wires, nanoboxes, and hetero-nanowall oxide devices with widths of 20-120nm and excellent size controllability.

Original languageEnglish
Article number05FA10
JournalJapanese Journal of Applied Physics
Issue number5 SPEC. ISSUE 1
Publication statusPublished - 2014 May


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