TY - GEN
T1 - A1 mode Lamb wave on thin LiTaO3 for high frequency acoustic devices
AU - Assila, Najoua
AU - Kadota, Michio
AU - Ohashi, Yuji
AU - Tanaka, Shuji
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/28
Y1 - 2016/11/28
N2 - The Lamb waves and horizontal shear waves' propagation in LiTaO3 thin plate is investigated as a function of Euler angles. Both velocity and electromechanical coupling factor largely depend on the plate's thickness. Around (0°, 30°, 0°), LiTaO3 thin plate has a high velocity and a suitable coupling factor for a high frequency filter. Authors fabricated A1 mode Lamb wave resonators in (0°, 39°, 0°) LiTaO3's thin plate. Lamb waves' velocities and leaky Lamb wave' velocities were measured by network analyzer and ultrasonic microscopy. Measured velocities correspond to the ones calculated by FEM. Velocities higher than 20,000 m/s were obtained. It is then shown that A1 mode Lamb wave close to (0°, 30°, 0°) LiTaO3 thin plate is suitable for high frequency devices.
AB - The Lamb waves and horizontal shear waves' propagation in LiTaO3 thin plate is investigated as a function of Euler angles. Both velocity and electromechanical coupling factor largely depend on the plate's thickness. Around (0°, 30°, 0°), LiTaO3 thin plate has a high velocity and a suitable coupling factor for a high frequency filter. Authors fabricated A1 mode Lamb wave resonators in (0°, 39°, 0°) LiTaO3's thin plate. Lamb waves' velocities and leaky Lamb wave' velocities were measured by network analyzer and ultrasonic microscopy. Measured velocities correspond to the ones calculated by FEM. Velocities higher than 20,000 m/s were obtained. It is then shown that A1 mode Lamb wave close to (0°, 30°, 0°) LiTaO3 thin plate is suitable for high frequency devices.
KW - A mode
KW - bandwidth
KW - frequency
KW - Interdigital transducer
KW - LiTaO
KW - resonance
UR - http://www.scopus.com/inward/record.url?scp=85007178950&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85007178950&partnerID=8YFLogxK
U2 - 10.1109/NEMS.2016.7758293
DO - 10.1109/NEMS.2016.7758293
M3 - Conference contribution
AN - SCOPUS:85007178950
T3 - 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
SP - 473
EP - 477
BT - 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
Y2 - 17 April 2016 through 20 April 2016
ER -