Asymmetric distribution of oxygen concentration in the Si melt of a Czochralski system

K. W. Yi; K. Kakimoto; Z. G. Niu; M. Eguchi; H. Noguchi; S. Nakamura; K. Mukai

doi:10.1149/1.1836508

Asymmetric distribution of oxygen concentration in the Si melt of a Czochralski system

K. W. Yi, K. Kakimoto, Z. G. Niu, M. Eguchi, H. Noguchi, S. Nakamura, K. Mukai

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Oxygen concentration in the Si melt of a Czochralski system was measured by immersing an oxygen sensor in the melt. The measurement clarified the existence of an inhomogeneous distribution of oxygen whose pattern was similar to the temperature distribution in the melt. This result suggests that the oxygen profile in the Si melt is not axisymmetric, although the furnace structure is axisymmetric. This oxygen fluctuation is proposed to be one reason for striations appearing in the grown crystals.

Original language	English
Pages (from-to)	722-725
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	143
Issue number	2
DOIs	https://doi.org/10.1149/1.1836508
Publication status	Published - 1996 Feb
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.1836508

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abstract = "Oxygen concentration in the Si melt of a Czochralski system was measured by immersing an oxygen sensor in the melt. The measurement clarified the existence of an inhomogeneous distribution of oxygen whose pattern was similar to the temperature distribution in the melt. This result suggests that the oxygen profile in the Si melt is not axisymmetric, although the furnace structure is axisymmetric. This oxygen fluctuation is proposed to be one reason for striations appearing in the grown crystals.",

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AU - Yi, K. W.

AU - Kakimoto, K.

AU - Niu, Z. G.

AU - Eguchi, M.

AU - Noguchi, H.

AU - Nakamura, S.

AU - Mukai, K.

PY - 1996/2

Y1 - 1996/2

N2 - Oxygen concentration in the Si melt of a Czochralski system was measured by immersing an oxygen sensor in the melt. The measurement clarified the existence of an inhomogeneous distribution of oxygen whose pattern was similar to the temperature distribution in the melt. This result suggests that the oxygen profile in the Si melt is not axisymmetric, although the furnace structure is axisymmetric. This oxygen fluctuation is proposed to be one reason for striations appearing in the grown crystals.

AB - Oxygen concentration in the Si melt of a Czochralski system was measured by immersing an oxygen sensor in the melt. The measurement clarified the existence of an inhomogeneous distribution of oxygen whose pattern was similar to the temperature distribution in the melt. This result suggests that the oxygen profile in the Si melt is not axisymmetric, although the furnace structure is axisymmetric. This oxygen fluctuation is proposed to be one reason for striations appearing in the grown crystals.

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Asymmetric distribution of oxygen concentration in the Si melt of a Czochralski system

Abstract

ASJC Scopus subject areas

UN SDGs

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