Asymmetric dual grating gate bilayer graphene FET for detection of terahertz radiation

J. A. Delgado Notario; V. Clerico; Y. M. Meziani; E. Diez; J. E. Velazquez; T. Taniguchi; K. Watanabe; D. Yadav; T. Otsuji

doi:10.1109/IRMMW-THz.2017.8067235

Asymmetric dual grating gate bilayer graphene FET for detection of terahertz radiation

J. A. Delgado Notario, V. Clerico, Y. M. Meziani, E. Diez, J. E. Velazquez, T. Taniguchi, K. Watanabe, D. Yadav, T. Otsuji

Broadband Engineering Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on detection of terahertz radiation by using bilayer graphene-based FET with asymmetric grating gates. The device was fabricated with a stack of h-BN/Graphene/h-BN with a back gate as well as an asymmetric dual grating top gates. It was subjected to terahertz radiation at frequencies of 150 and 300 GHz at 4K and a clear photocurrent was obtained.

Original language	English
Title of host publication	2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
Publisher	IEEE Computer Society
ISBN (Electronic)	9781509060481
DOIs	https://doi.org/10.1109/IRMMW-THz.2017.8067235
Publication status	Published - 2017 Oct 12
Event	42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017 - Cancun, Quintana Roo, Mexico Duration: 2017 Aug 27 → 2017 Sept 1

Publication series

Name	International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN (Print)	2162-2027
ISSN (Electronic)	2162-2035

Other

Other	42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
Country/Territory	Mexico
City	Cancun, Quintana Roo
Period	17/8/27 → 17/9/1

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering

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10.1109/IRMMW-THz.2017.8067235

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Delgado Notario, J. A., Clerico, V., Meziani, Y. M., Diez, E., Velazquez, J. E., Taniguchi, T., Watanabe, K., Yadav, D., & Otsuji, T. (2017). Asymmetric dual grating gate bilayer graphene FET for detection of terahertz radiation. In 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017 [8067235] (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). IEEE Computer Society. https://doi.org/10.1109/IRMMW-THz.2017.8067235

Asymmetric dual grating gate bilayer graphene FET for detection of terahertz radiation. / Delgado Notario, J. A.; Clerico, V.; Meziani, Y. M. et al.
2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017. IEEE Computer Society, 2017. 8067235 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Delgado Notario, JA, Clerico, V, Meziani, YM, Diez, E, Velazquez, JE, Taniguchi, T, Watanabe, K, Yadav, D & Otsuji, T 2017, Asymmetric dual grating gate bilayer graphene FET for detection of terahertz radiation. in 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017., 8067235, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, IEEE Computer Society, 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017, Cancun, Quintana Roo, Mexico, 17/8/27. https://doi.org/10.1109/IRMMW-THz.2017.8067235

Delgado Notario JA, Clerico V, Meziani YM, Diez E, Velazquez JE, Taniguchi T et al. Asymmetric dual grating gate bilayer graphene FET for detection of terahertz radiation. In 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017. IEEE Computer Society. 2017. 8067235. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). doi: 10.1109/IRMMW-THz.2017.8067235

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title = "Asymmetric dual grating gate bilayer graphene FET for detection of terahertz radiation",

abstract = "We report on detection of terahertz radiation by using bilayer graphene-based FET with asymmetric grating gates. The device was fabricated with a stack of h-BN/Graphene/h-BN with a back gate as well as an asymmetric dual grating top gates. It was subjected to terahertz radiation at frequencies of 150 and 300 GHz at 4K and a clear photocurrent was obtained.",

author = "{Delgado Notario}, {J. A.} and V. Clerico and Meziani, {Y. M.} and E. Diez and Velazquez, {J. E.} and T. Taniguchi and K. Watanabe and D. Yadav and T. Otsuji",

note = "Funding Information: This work was financially supported by the MINECO/FEDER Research Grants #TEC2015-65477-R, #MAT2013-46308-C2-1-R, #MAT2016-75955-C2-2-R and FEDER/Junta de Castilla y Le{\'o}n Research Grant #SA045U16. Y. M. Meziani acknowledges the financial support from RIEC nation-wide Collaborative Research Project, Sendai Japan. Authors from Japan acknowledge support from JSPS KAKENHI (16H06361). Publisher Copyright: {\textcopyright} 2017 IEEE.; 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017 ; Conference date: 27-08-2017 Through 01-09-2017",

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AU - Delgado Notario, J. A.

AU - Clerico, V.

AU - Meziani, Y. M.

AU - Diez, E.

AU - Velazquez, J. E.

AU - Taniguchi, T.

AU - Watanabe, K.

AU - Yadav, D.

AU - Otsuji, T.

N1 - Funding Information: This work was financially supported by the MINECO/FEDER Research Grants #TEC2015-65477-R, #MAT2013-46308-C2-1-R, #MAT2016-75955-C2-2-R and FEDER/Junta de Castilla y León Research Grant #SA045U16. Y. M. Meziani acknowledges the financial support from RIEC nation-wide Collaborative Research Project, Sendai Japan. Authors from Japan acknowledge support from JSPS KAKENHI (16H06361). Publisher Copyright: © 2017 IEEE.

PY - 2017/10/12

Y1 - 2017/10/12

N2 - We report on detection of terahertz radiation by using bilayer graphene-based FET with asymmetric grating gates. The device was fabricated with a stack of h-BN/Graphene/h-BN with a back gate as well as an asymmetric dual grating top gates. It was subjected to terahertz radiation at frequencies of 150 and 300 GHz at 4K and a clear photocurrent was obtained.

AB - We report on detection of terahertz radiation by using bilayer graphene-based FET with asymmetric grating gates. The device was fabricated with a stack of h-BN/Graphene/h-BN with a back gate as well as an asymmetric dual grating top gates. It was subjected to terahertz radiation at frequencies of 150 and 300 GHz at 4K and a clear photocurrent was obtained.

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Asymmetric dual grating gate bilayer graphene FET for detection of terahertz radiation

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