Asymmetric Dual Grating Gate Graphene-based THz detectors

J. A. Delgado-Notario, V. Clerico, E. DIez, J. E. Velazquez-Perez, T. Taniguchi, K. Watanabe, T. Otsuji, Y. M. Meziani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report on detection of terahertz radiation by using asymmetric dual-grating gates graphene-based FET. The graphene sheet was sandwiched between two layers of hexagonal Boron Nitride (h-BN) to avoid interaction with the substrate and enhance carrier mobility. Asymmetric dual metal gates were processed on the top of the upper h-BN layer. The devices were excited with terahertz radiation at frequencies of 0.15 and 0.3 THz and a clear photocurrent was observed from 4K up to room temperature.

Original languageEnglish
Title of host publicationIRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves
PublisherIEEE Computer Society
ISBN (Electronic)9781538682852
DOIs
Publication statusPublished - 2019 Sept
Event44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019 - Paris, France
Duration: 2019 Sept 12019 Sept 6

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume2019-September
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019
Country/TerritoryFrance
CityParis
Period19/9/119/9/6

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Asymmetric Dual Grating Gate Graphene-based THz detectors'. Together they form a unique fingerprint.

Cite this