TY - GEN
T1 - Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection
AU - Boubanga-Tombet, Stephane
AU - Tanimoto, Yudai
AU - Watanabe, Takayuki
AU - Suemitsu, Tetsuya
AU - Wang, Yuye
AU - Minamide, Hiroaki
AU - Ito, Hiromasa
AU - Popov, Vyacheslav
AU - Otsuji, Taiichi
PY - 2012
Y1 - 2012
N2 - We report terahertz detectors with a record sensitivity of 6.4 kV/W and noise equivalent power of 15 pW/√Hz in the above 1 THz region. The key point of this major breakthrough is careful design and fabrication of Plasmonic devices based on Field Effect Transistor structures combining interdigitated metal gates and an asymmetric metallization scheme.
AB - We report terahertz detectors with a record sensitivity of 6.4 kV/W and noise equivalent power of 15 pW/√Hz in the above 1 THz region. The key point of this major breakthrough is careful design and fabrication of Plasmonic devices based on Field Effect Transistor structures combining interdigitated metal gates and an asymmetric metallization scheme.
UR - http://www.scopus.com/inward/record.url?scp=84873438840&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873438840&partnerID=8YFLogxK
U2 - 10.1109/IRMMW-THz.2012.6380401
DO - 10.1109/IRMMW-THz.2012.6380401
M3 - Conference contribution
AN - SCOPUS:84873438840
SN - 9781467315975
T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
BT - IRMMW-THz 2012 - 37th International Conference on Infrared, Millimeter, and Terahertz Waves
T2 - 37th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2012
Y2 - 23 September 2012 through 28 September 2012
ER -