@article{087620ceb6b246de9ac4a26c8e009ca6,
title = "Asymmetric dual-grating gates graphene FET for detection of terahertz radiations",
abstract = "A graphene-based field-effect-transistor with asymmetric dual-grating gates was fabricated and characterized under excitation of terahertz radiation at two frequencies: 0.15 THz and 0.3 THz. The graphene sheet was encapsulated between two flakes of h-BN and placed on a highly doped SiO2/Si substrate. An asymmetric dual-grating gate was implemented on the h-BN top flake. Even though no antenna was used to couple the incoming radiation, a clear gate-bias-dependent photocurrent was measured under excitation at 0.3 THz up to room temperature. We subsequently demonstrated that the device can be used for terahertz sensing and inspection of hidden metallic objects at room temperature. ",
author = "Delgado-Notario, {J. A.} and V. Cleric{\`o} and E. Diez and Vel{\'a}zquez-P{\'e}rez, {J. E.} and T. Taniguchi and K. Watanabe and T. Otsuji and Meziani, {Y. M.}",
note = "Funding Information: This research was supported by the Agencia Estatal de Investi-gaci{\'o}n of Spain (Grant Nos. MAT2016-75955, TEC2015-65477-R, and RTI2018-097180-B-100), the Junta de Castilla y Le{\'o}n (Grant No. SA256P18), including funding by ERDF/FEDER and the JSPS KAKENHI (Grant No. 16H06361). J.A.D.N. thanks the Japan Society for the Promotion of Science (JSPS) for supporting him as an International Research Fellow. Growth of hexagonal boron nitride crystals was supported by the MEXT Element Strategy Initiative to Form Core Research Center, Grant No. JPMXP0112101001, and the CREST (Grant No. JPMJCR15F3), JST. Publisher Copyright: {\textcopyright} 2020 Author(s).",
year = "2020",
month = jun,
day = "1",
doi = "10.1063/5.0007249",
language = "English",
volume = "5",
journal = "APL Photonics",
issn = "2378-0967",
publisher = "AIP Publishing LLC",
number = "6",
}