Asymmetric dual-grating gates graphene FET for detection of terahertz radiations

J. A. Delgado-Notario, V. Clericò, E. Diez, J. E. Velázquez-Pérez, T. Taniguchi, K. Watanabe, T. Otsuji, Y. M. Meziani

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


A graphene-based field-effect-transistor with asymmetric dual-grating gates was fabricated and characterized under excitation of terahertz radiation at two frequencies: 0.15 THz and 0.3 THz. The graphene sheet was encapsulated between two flakes of h-BN and placed on a highly doped SiO2/Si substrate. An asymmetric dual-grating gate was implemented on the h-BN top flake. Even though no antenna was used to couple the incoming radiation, a clear gate-bias-dependent photocurrent was measured under excitation at 0.3 THz up to room temperature. We subsequently demonstrated that the device can be used for terahertz sensing and inspection of hidden metallic objects at room temperature.

Original languageEnglish
Article number0007249
JournalAPL Photonics
Issue number6
Publication statusPublished - 2020 Jun 1

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications


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