Atom insertion into the CoSb3 skutterudite host lattice under high pressure

Hirotsugu Takizawa, Keiichi Miura, Masayuki Ito, Tsutomu Suzuki, Tadashi Endo

Research output: Contribution to journalArticlepeer-review

101 Citations (Scopus)


CoSb3 with the skutterudite-type structure was synthesized by solid-state reaction and the atom insertion into the body-centered vacant site was attempted under high pressure and temperature conditions. Various 14-group elements were selected for atom insertion under pressure of 30 MPa to 5 GPa. It was found that various elements could be inserted in the body-centered vacant site, resulting in the formation of new filled-skutterudite phase MxCo4Sb12 (M=Si, Ge, Sn, Pb). The degree of insertion (x) increased with increasing the applied pressure. In the case of the Sn-CoSb3 system, nearly 40% of the body-centered vacant site was filled by Sn atom at 5 GPa. The crystal structure of resulting Sn0.4Co4Sb12 was refined by the Rietveld analysis of the X-ray diffraction data.

Original languageEnglish
Pages (from-to)79-83
Number of pages5
JournalJournal of Alloys and Compounds
Issue number1-2
Publication statusPublished - 1999


  • Atom insertion
  • High pressure
  • Rietveld analysis
  • Skutterudite
  • Thermoelectric materials

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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