Atom probe study of erbium and oxygen co-implanted silicon

Yasuo Shimizu; Yuan Tu; Ayman Abdelghafar; Maasa Yano; Yudai Suzuki; Takashi Tanii; Takahiro Shinada; Enrico Prati; Michele Celebrano; Marco Finazzi; Lavinia Ghirardini; Koji Inoue; Yasuyoshi Nagai

doi:10.23919/SNW.2017.8242316

Atom probe study of erbium and oxygen co-implanted silicon

Yasuo Shimizu, Yuan Tu, Ayman Abdelghafar, Maasa Yano, Yudai Suzuki, Takashi Tanii, Takahiro Shinada, Enrico Prati, Michele Celebrano, Marco Finazzi, Lavinia Ghirardini, Koji Inoue, Yasuyoshi Nagai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

It has been reported that erbium (Er) is a source of optical emission at λ=1.54 pm due to ⁴I_13/2 →⁴I_15/2 transition of Er³⁺. A method of oxygen (O) codoping with Er has attracted attention as a candidate for obtaining more efficient optical gain by forming Er:O complex. Although several simulations predict the equilibrium structure of Er:O complex, it is difficult to understand experimentally how related between these implanted ions followed by annealing for optical activation. In this workshop, we reported the preliminary results on three-dimensional distributions of Er and O co-implanted into Si investigated by atom probe tomography.

Original language	English
Title of host publication	2017 Silicon Nanoelectronics Workshop, SNW 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	99-100
Number of pages	2
ISBN (Electronic)	9784863486478
DOIs	https://doi.org/10.23919/SNW.2017.8242316
Publication status	Published - 2017 Dec 29
Event	22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan Duration: 2017 Jun 4 → 2017 Jun 5

Publication series

Name	2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume	2017-January

Other

Other	22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/Territory	Japan
City	Kyoto
Period	17/6/4 → 17/6/5

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.23919/SNW.2017.8242316

Cite this

Shimizu, Y., Tu, Y., Abdelghafar, A., Yano, M., Suzuki, Y., Tanii, T., Shinada, T., Prati, E., Celebrano, M., Finazzi, M., Ghirardini, L., Inoue, K., & Nagai, Y. (2017). Atom probe study of erbium and oxygen co-implanted silicon. In 2017 Silicon Nanoelectronics Workshop, SNW 2017 (pp. 99-100). [8242316] (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2017.8242316

Atom probe study of erbium and oxygen co-implanted silicon. / Shimizu, Yasuo; Tu, Yuan; Abdelghafar, Ayman et al.
2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 99-100 8242316 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shimizu, Y, Tu, Y, Abdelghafar, A, Yano, M, Suzuki, Y, Tanii, T, Shinada, T, Prati, E, Celebrano, M, Finazzi, M, Ghirardini, L, Inoue, K & Nagai, Y 2017, Atom probe study of erbium and oxygen co-implanted silicon. in 2017 Silicon Nanoelectronics Workshop, SNW 2017., 8242316, 2017 Silicon Nanoelectronics Workshop, SNW 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 99-100, 22nd Silicon Nanoelectronics Workshop, SNW 2017, Kyoto, Japan, 17/6/4. https://doi.org/10.23919/SNW.2017.8242316

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abstract = "It has been reported that erbium (Er) is a source of optical emission at λ=1.54 pm due to 4I13/2 →4I15/2 transition of Er3+. A method of oxygen (O) codoping with Er has attracted attention as a candidate for obtaining more efficient optical gain by forming Er:O complex. Although several simulations predict the equilibrium structure of Er:O complex, it is difficult to understand experimentally how related between these implanted ions followed by annealing for optical activation. In this workshop, we reported the preliminary results on three-dimensional distributions of Er and O co-implanted into Si investigated by atom probe tomography.",

author = "Yasuo Shimizu and Yuan Tu and Ayman Abdelghafar and Maasa Yano and Yudai Suzuki and Takashi Tanii and Takahiro Shinada and Enrico Prati and Michele Celebrano and Marco Finazzi and Lavinia Ghirardini and Koji Inoue and Yasuyoshi Nagai",

note = "Funding Information: This work was supported in part by JSPS KAKENHI Grant Numbers 25289109 and 15H05413. Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",

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doi = "10.23919/SNW.2017.8242316",

language = "English",

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AU - Shimizu, Yasuo

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AU - Abdelghafar, Ayman

AU - Yano, Maasa

AU - Suzuki, Yudai

AU - Tanii, Takashi

AU - Shinada, Takahiro

AU - Prati, Enrico

AU - Celebrano, Michele

AU - Finazzi, Marco

AU - Ghirardini, Lavinia

AU - Inoue, Koji

AU - Nagai, Yasuyoshi

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AB - It has been reported that erbium (Er) is a source of optical emission at λ=1.54 pm due to 4I13/2 →4I15/2 transition of Er3+. A method of oxygen (O) codoping with Er has attracted attention as a candidate for obtaining more efficient optical gain by forming Er:O complex. Although several simulations predict the equilibrium structure of Er:O complex, it is difficult to understand experimentally how related between these implanted ions followed by annealing for optical activation. In this workshop, we reported the preliminary results on three-dimensional distributions of Er and O co-implanted into Si investigated by atom probe tomography.

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Atom probe study of erbium and oxygen co-implanted silicon

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