TY - GEN
T1 - Atomic diffusion bonding for optical devices with high optical density
AU - Yonezawa, G.
AU - Takahashi, Y.
AU - Sato, Y.
AU - Abe, S.
AU - Uomoto, M.
AU - Shimatsu, T.
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2018
Y1 - 2018
N2 - An inorganic bonding method providing 100% light transmittance at the bonded interface was proposed for fabricating devices with high optical density. First, we fabricated 5000 run-thick SiO2 oxide underlayers on synthetic quartz glass wafers. After the film surfaces were polished to reduce surface roughness, the wafers with oxide underlayers were bonded using thin Ti films in vacuum at room temperature as a usual atomic diffusion process. After post annealing at 300 °C, 100% light transmittance at the bonded interface with the surface free energy at the bonded interface greater than 2 J/m2 was achieved. Dissociated oxygen from oxide layers probably enhanced Ti films oxidation, resulting in high light transmittance with high bonding strength attributable to the annealing. Using this bonding process, we fabricated a polarizing beam splitter and demonstrated that this bonding process is useful to fabricate devices with high optical density.
AB - An inorganic bonding method providing 100% light transmittance at the bonded interface was proposed for fabricating devices with high optical density. First, we fabricated 5000 run-thick SiO2 oxide underlayers on synthetic quartz glass wafers. After the film surfaces were polished to reduce surface roughness, the wafers with oxide underlayers were bonded using thin Ti films in vacuum at room temperature as a usual atomic diffusion process. After post annealing at 300 °C, 100% light transmittance at the bonded interface with the surface free energy at the bonded interface greater than 2 J/m2 was achieved. Dissociated oxygen from oxide layers probably enhanced Ti films oxidation, resulting in high light transmittance with high bonding strength attributable to the annealing. Using this bonding process, we fabricated a polarizing beam splitter and demonstrated that this bonding process is useful to fabricate devices with high optical density.
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U2 - 10.1149/08605.0233ecst
DO - 10.1149/08605.0233ecst
M3 - Conference contribution
AN - SCOPUS:85058278565
SN - 9781510871656
T3 - ECS Transactions
SP - 233
EP - 245
BT - ECS Transactions
A2 - Tan, C.S.
A2 - Suga, T.
A2 - Baumgart, H.
A2 - Fournel, F.
A2 - Goorsky, M.
A2 - Hobart, K.D.
A2 - Knechtel, R.
PB - Electrochemical Society Inc.
T2 - Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting
Y2 - 30 September 2018 through 4 October 2018
ER -