Atomic diffusion bonding in air using Ag films

Yuki Watabe, Fuki Goto, Miyuki Uomoto, Takehito Shimatsu

Research output: Contribution to journalArticlepeer-review


Atomic diffusion bonding (ADB) of wafers at room temperature in air was studied using Ag films. Using an ultra-high vacuum magnetron sputtering system, Ag (20 nm) films with Ti (5 nm) underlayers were deposited. The propagation speed of crystal lattice rearrangement in the bonding process decreased with an increased exposure time of film surfaces to air (t exp). Propagation did not occur at t exp of 500 s. The cohesion of Ag film surfaces by film surface exposure to air and reduction of the Ag film surface energy by Ag oxide or sulfide formation probably cause ADB performance degradation.

Original languageEnglish
Article numberSF1003
JournalJapanese journal of applied physics
Issue numberSE
Publication statusPublished - 2022 Jun


  • adhesion
  • atomic diffusion bonding in air
  • cohesion
  • crystal lattice rearrangement
  • room temperature bonding
  • silver films
  • surface energy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Atomic diffusion bonding in air using Ag films'. Together they form a unique fingerprint.

Cite this