TY - GEN
T1 - Atomic diffusion bonding of wafers in air with thin Au films and its application to optical devices fabrication
AU - Shimatsu, T.
AU - Uomoto, M.
AU - Oba, K.
AU - Furukata, Y.
PY - 2012
Y1 - 2012
N2 - Atomic diffusion bonding (ADB) of two flat wafers in air with Au films was studied. Experimental results indicate that wafers can be bonded in air with bonding strength of greater than 25 MPa using only 1 nm total thickness of Au and Cr underlayer on each side.
AB - Atomic diffusion bonding (ADB) of two flat wafers in air with Au films was studied. Experimental results indicate that wafers can be bonded in air with bonding strength of greater than 25 MPa using only 1 nm total thickness of Au and Cr underlayer on each side.
UR - http://www.scopus.com/inward/record.url?scp=84864830792&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864830792&partnerID=8YFLogxK
U2 - 10.1109/LTB-3D.2012.6238063
DO - 10.1109/LTB-3D.2012.6238063
M3 - Conference contribution
AN - SCOPUS:84864830792
SN - 9781467307420
T3 - Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
SP - 103
BT - Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
T2 - 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Y2 - 22 May 2012 through 23 May 2012
ER -