TY - JOUR
T1 - Atomic diffusion bonding with oxide underlayers using Al and amorphous Si films for high optical density applications
AU - Yonezawa, Gen
AU - Uomoto, Miyuki
AU - Shimatsu, Takehito
N1 - Publisher Copyright:
© 2022 The Japan Society of Applied Physics
PY - 2022/6
Y1 - 2022/6
N2 - Atomic diffusion bonding with oxide underlayers using Al and a-Si films was examined to create a bonded interface with Al2O3 and Si-oxides having large band gaps for high optical density applications. Surface free energy of the bonded interface greater than 2 J m−2 and 100% light transmittance were achieved after annealing at 300 °C in the range of film thicknesses δ on both sides from 0.3 to 0.5 nm using Al films and with δ of around 0.5 nm using a-Si films. Structural analyses revealed that the bonded interface consists of Al2O3 and Si-oxides with oxygen dissociated from oxide underlayers.
AB - Atomic diffusion bonding with oxide underlayers using Al and a-Si films was examined to create a bonded interface with Al2O3 and Si-oxides having large band gaps for high optical density applications. Surface free energy of the bonded interface greater than 2 J m−2 and 100% light transmittance were achieved after annealing at 300 °C in the range of film thicknesses δ on both sides from 0.3 to 0.5 nm using Al films and with δ of around 0.5 nm using a-Si films. Structural analyses revealed that the bonded interface consists of Al2O3 and Si-oxides with oxygen dissociated from oxide underlayers.
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U2 - 10.35848/1347-4065/ac5870
DO - 10.35848/1347-4065/ac5870
M3 - Article
AN - SCOPUS:85131141815
SN - 0021-4922
VL - 61
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - SF
M1 - SF1011
ER -