Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance

Kazuhiko Endo; Yuki Ishikawa; Takashi Matsukawa; Yongxum Liu; Shin Ichi O'uchi; Kunihiro Sakamoto; Junichi Tsukada; Hiromi Yamauchi; Meishoku Masahara

doi:10.1109/ESSDERC.2011.6044229

Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance

Kazuhiko Endo, Yuki Ishikawa, Takashi Matsukawa, Yongxum Liu, Shin Ichi O'uchi, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

We have successfully fabricated FinFETs with a 25-nm-short extension of the source/drain by using atomic layer deposition of SiO₂ thin films for the side-wall spacer of the gate electrode. The performance of the FinFET has been successfully improved by the reduction of the parasitic resistance.

Original language	English
Title of host publication	ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference
Pages	83-86
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2011.6044229
Publication status	Published - 2011
Event	41st European Solid-State Device Research Conference, ESSDERC 2011 - Helsinki, Finland Duration: 2011 Sept 12 → 2011 Sept 16

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	41st European Solid-State Device Research Conference, ESSDERC 2011
Country/Territory	Finland
City	Helsinki
Period	11/9/12 → 11/9/16

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10.1109/ESSDERC.2011.6044229

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Endo, K., Ishikawa, Y., Matsukawa, T., Liu, Y., O'uchi, S. I., Sakamoto, K., Tsukada, J., Yamauchi, H., & Masahara, M. (2011). Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance. In ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference (pp. 83-86). Article 6044229 (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2011.6044229

@inproceedings{62212877138045569767bcd28599b8ee,

title = "Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance",

abstract = "We have successfully fabricated FinFETs with a 25-nm-short extension of the source/drain by using atomic layer deposition of SiO2 thin films for the side-wall spacer of the gate electrode. The performance of the FinFET has been successfully improved by the reduction of the parasitic resistance.",

author = "Kazuhiko Endo and Yuki Ishikawa and Takashi Matsukawa and Yongxum Liu and O'uchi, {Shin Ichi} and Kunihiro Sakamoto and Junichi Tsukada and Hiromi Yamauchi and Meishoku Masahara",

year = "2011",

doi = "10.1109/ESSDERC.2011.6044229",

language = "English",

isbn = "9781457707056",

series = "European Solid-State Device Research Conference",

pages = "83--86",

booktitle = "ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference",

note = "41st European Solid-State Device Research Conference, ESSDERC 2011 ; Conference date: 12-09-2011 Through 16-09-2011",

}

Endo, K, Ishikawa, Y, Matsukawa, T, Liu, Y, O'uchi, SI, Sakamoto, K, Tsukada, J, Yamauchi, H & Masahara, M 2011, Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance. in ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference., 6044229, European Solid-State Device Research Conference, pp. 83-86, 41st European Solid-State Device Research Conference, ESSDERC 2011, Helsinki, Finland, 11/9/12. https://doi.org/10.1109/ESSDERC.2011.6044229

Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance. / Endo, Kazuhiko; Ishikawa, Yuki; Matsukawa, Takashi et al.
ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference. 2011. p. 83-86 6044229 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance

AU - Endo, Kazuhiko

AU - Ishikawa, Yuki

AU - Matsukawa, Takashi

AU - Liu, Yongxum

AU - O'uchi, Shin Ichi

AU - Sakamoto, Kunihiro

AU - Tsukada, Junichi

AU - Yamauchi, Hiromi

AU - Masahara, Meishoku

PY - 2011

Y1 - 2011

N2 - We have successfully fabricated FinFETs with a 25-nm-short extension of the source/drain by using atomic layer deposition of SiO2 thin films for the side-wall spacer of the gate electrode. The performance of the FinFET has been successfully improved by the reduction of the parasitic resistance.

AB - We have successfully fabricated FinFETs with a 25-nm-short extension of the source/drain by using atomic layer deposition of SiO2 thin films for the side-wall spacer of the gate electrode. The performance of the FinFET has been successfully improved by the reduction of the parasitic resistance.

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DO - 10.1109/ESSDERC.2011.6044229

M3 - Conference contribution

AN - SCOPUS:82955188010

SN - 9781457707056

T3 - European Solid-State Device Research Conference

SP - 83

EP - 86

BT - ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference

T2 - 41st European Solid-State Device Research Conference, ESSDERC 2011

Y2 - 12 September 2011 through 16 September 2011

ER -

Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance

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