Atomic layer deposition of high-k gate dielectrics using MO precursor and cyclic plasma exposure

Kazuhiko Endo; Toru Tatsumi

Atomic layer deposition of high-k gate dielectrics using MO precursor and cyclic plasma exposure

Kazuhiko Endo, Toru Tatsumi

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have successfully achieved an ALD like deposition of ZrO₂ or HfO₂ by using a MO precursor. The MO precursor used in this study was zirconium tetra-tert-butoxide (ZTB) Zr(t-OC(CH₃)₃)₄ and hafnium tetra-tert-butoxide (HTB) Hf(t-OC(CH₃)₃)₄. Because MO precursors are very sensitive to H₂O, we used oxygen plasma as an oxidizer instead of H₂O in order to reduce background H₂O pressure and suppress the background reaction. As a result, we successfully achieved an ALD-like deposition proved by a self-limiting adsorption of MO precursor. The carbon content in the films was suppressed due to highly reactive oxygen plasma. The leakage current of the film with plasma oxidation is much lower than that of film with H₂O oxidation. Thus, MO-ALD using a plasma oxidation is a promising candidate for the high-k gate deposition process.

Original language	English
Pages (from-to)	47-52
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	745
Publication status	Published - 2002 Dec 1
Externally published	Yes
Event	Novel Materials and Processes for Advanced CMOS - Boston, MA, United States Duration: 2002 Dec 2 → 2002 Dec 4

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{cecb456b258f44c6b78e4017d50834cd,

title = "Atomic layer deposition of high-k gate dielectrics using MO precursor and cyclic plasma exposure",

abstract = "We have successfully achieved an ALD like deposition of ZrO2 or HfO2 by using a MO precursor. The MO precursor used in this study was zirconium tetra-tert-butoxide (ZTB) Zr(t-OC(CH3)3)4 and hafnium tetra-tert-butoxide (HTB) Hf(t-OC(CH3)3)4. Because MO precursors are very sensitive to H2O, we used oxygen plasma as an oxidizer instead of H2O in order to reduce background H2O pressure and suppress the background reaction. As a result, we successfully achieved an ALD-like deposition proved by a self-limiting adsorption of MO precursor. The carbon content in the films was suppressed due to highly reactive oxygen plasma. The leakage current of the film with plasma oxidation is much lower than that of film with H2O oxidation. Thus, MO-ALD using a plasma oxidation is a promising candidate for the high-k gate deposition process.",

author = "Kazuhiko Endo and Toru Tatsumi",

year = "2002",

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language = "English",

volume = "745",

pages = "47--52",

journal = "Materials Research Society Symposium - Proceedings",

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note = "Novel Materials and Processes for Advanced CMOS ; Conference date: 02-12-2002 Through 04-12-2002",

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TY - JOUR

T1 - Atomic layer deposition of high-k gate dielectrics using MO precursor and cyclic plasma exposure

AU - Endo, Kazuhiko

AU - Tatsumi, Toru

PY - 2002/12/1

Y1 - 2002/12/1

N2 - We have successfully achieved an ALD like deposition of ZrO2 or HfO2 by using a MO precursor. The MO precursor used in this study was zirconium tetra-tert-butoxide (ZTB) Zr(t-OC(CH3)3)4 and hafnium tetra-tert-butoxide (HTB) Hf(t-OC(CH3)3)4. Because MO precursors are very sensitive to H2O, we used oxygen plasma as an oxidizer instead of H2O in order to reduce background H2O pressure and suppress the background reaction. As a result, we successfully achieved an ALD-like deposition proved by a self-limiting adsorption of MO precursor. The carbon content in the films was suppressed due to highly reactive oxygen plasma. The leakage current of the film with plasma oxidation is much lower than that of film with H2O oxidation. Thus, MO-ALD using a plasma oxidation is a promising candidate for the high-k gate deposition process.

AB - We have successfully achieved an ALD like deposition of ZrO2 or HfO2 by using a MO precursor. The MO precursor used in this study was zirconium tetra-tert-butoxide (ZTB) Zr(t-OC(CH3)3)4 and hafnium tetra-tert-butoxide (HTB) Hf(t-OC(CH3)3)4. Because MO precursors are very sensitive to H2O, we used oxygen plasma as an oxidizer instead of H2O in order to reduce background H2O pressure and suppress the background reaction. As a result, we successfully achieved an ALD-like deposition proved by a self-limiting adsorption of MO precursor. The carbon content in the films was suppressed due to highly reactive oxygen plasma. The leakage current of the film with plasma oxidation is much lower than that of film with H2O oxidation. Thus, MO-ALD using a plasma oxidation is a promising candidate for the high-k gate deposition process.

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M3 - Conference article

AN - SCOPUS:0037617824

SN - 0272-9172

VL - 745

SP - 47

EP - 52

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Novel Materials and Processes for Advanced CMOS

Y2 - 2 December 2002 through 4 December 2002

ER -

Atomic layer deposition of high-k gate dielectrics using MO precursor and cyclic plasma exposure

Abstract

ASJC Scopus subject areas

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