Atomic-layer doping in Si by alternately supplied NH3 and SiH4

Youngcheon Jeong; Masao Sakuraba; Junichi Murota

doi:10.1063/1.1576910

Atomic-layer doping in Si by alternately supplied NH₃ and SiH₄

Youngcheon Jeong, Masao Sakuraba, Junichi Murota

Information Devices Division

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32 Citations (Scopus)

Abstract

The low-temperature Si growth on the atomic-layer order nitrided Si surface with N amount of 1-6×10¹⁴ cm^-2 formed by NH₃ reaction at 400°C was discussed. It was suggested that crystallinity of Si film deposited on the atomic-layer order nitrided Si was degraded by the existence of Si₃N₄ structure. The depth profile of N atomic-layer doped Si film was found to showed that the N atoms were confined with about 1-nm-thick region.

Original language	English
Pages (from-to)	3472-3474
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	20
DOIs	https://doi.org/10.1063/1.1576910
Publication status	Published - 2003 May 19

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The low-temperature Si growth on the atomic-layer order nitrided Si surface with N amount of 1-6×1014 cm-2 formed by NH3 reaction at 400°C was discussed. It was suggested that crystallinity of Si film deposited on the atomic-layer order nitrided Si was degraded by the existence of Si3N4 structure. The depth profile of N atomic-layer doped Si film was found to showed that the N atoms were confined with about 1-nm-thick region.",

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Atomic-layer doping in Si by alternately supplied NH₃ and SiH₄

Abstract

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