The low-temperature Si growth on the atomic-layer order nitrided Si surface with N amount of 1-6×1014 cm-2 formed by NH3 reaction at 400°C was discussed. It was suggested that crystallinity of Si film deposited on the atomic-layer order nitrided Si was degraded by the existence of Si3N4 structure. The depth profile of N atomic-layer doped Si film was found to showed that the N atoms were confined with about 1-nm-thick region.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 May 19|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)