Cubic SiC was eptiaxially grown by gas source MBE for the first time utilizing the change in surface superstructures when the source gases of Si2H6 and C2H2 were introduced alternately. The number of Si atoms forming the surface superstructure determines the growth rate of the layer, which gives atomic layer control in SiC growth.
|Number of pages||3|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1989 Feb 2|
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry