Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructure

Takashi Fuyuki; Michiaki Nakayama; Tatsuo Yoshinobu; Hiromu Shiomi; Hiroyuki Matsunami

doi:10.1016/0022-0248(89)90442-9

Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructure

Takashi Fuyuki, Michiaki Nakayama, Tatsuo Yoshinobu, Hiromu Shiomi, Hiroyuki Matsunami

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

Cubic SiC was eptiaxially grown by gas source MBE for the first time utilizing the change in surface superstructures when the source gases of Si₂H₆ and C₂H₂ were introduced alternately. The number of Si atoms forming the surface superstructure determines the growth rate of the layer, which gives atomic layer control in SiC growth.

Original language	English
Pages (from-to)	461-463
Number of pages	3
Journal	Journal of Crystal Growth
Volume	95
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(89)90442-9
Publication status	Published - 1989 Feb 2
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(89)90442-9

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abstract = "Cubic SiC was eptiaxially grown by gas source MBE for the first time utilizing the change in surface superstructures when the source gases of Si2H6 and C2H2 were introduced alternately. The number of Si atoms forming the surface superstructure determines the growth rate of the layer, which gives atomic layer control in SiC growth.",

author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",

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AU - Fuyuki, Takashi

AU - Nakayama, Michiaki

AU - Yoshinobu, Tatsuo

AU - Shiomi, Hiromu

AU - Matsunami, Hiroyuki

PY - 1989/2/2

Y1 - 1989/2/2

N2 - Cubic SiC was eptiaxially grown by gas source MBE for the first time utilizing the change in surface superstructures when the source gases of Si2H6 and C2H2 were introduced alternately. The number of Si atoms forming the surface superstructure determines the growth rate of the layer, which gives atomic layer control in SiC growth.

AB - Cubic SiC was eptiaxially grown by gas source MBE for the first time utilizing the change in surface superstructures when the source gases of Si2H6 and C2H2 were introduced alternately. The number of Si atoms forming the surface superstructure determines the growth rate of the layer, which gives atomic layer control in SiC growth.

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Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructure

Abstract

ASJC Scopus subject areas

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