Atomic layer epitaxy of GaAs using triethylgallium and arsine

H. Ohno; S. Ohtsuka; H. Ishii; Y. Matsubara; H. Hasegawa

doi:10.1063/1.101195

Atomic layer epitaxy of GaAs using triethylgallium and arsine

H. Ohno, S. Ohtsuka, H. Ishii, Y. Matsubara, H. Hasegawa

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Hokkaido University

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34 Citations (Scopus)

Abstract

Atomic layer epitaxy (ALE) of GaAs is realized using triethylgallium (TEG) and arsine in a conventional atmospheric pressure metalorganic vapor phase epitaxy reactor. It is shown that the use of TEG and arsine resulted in ALE growth of GaAs in rather limited ranges of substrate temperature and the TEG supply rate. The mechanism of ALE is also discussed with the aid of x-ray photoelectron spectroscopy on the surfaces of clean GaAs before and after exposure to TEG.

Original language	English
Pages (from-to)	2000-2002
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	20
DOIs	https://doi.org/10.1063/1.101195
Publication status	Published - 1989

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10.1063/1.101195

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abstract = "Atomic layer epitaxy (ALE) of GaAs is realized using triethylgallium (TEG) and arsine in a conventional atmospheric pressure metalorganic vapor phase epitaxy reactor. It is shown that the use of TEG and arsine resulted in ALE growth of GaAs in rather limited ranges of substrate temperature and the TEG supply rate. The mechanism of ALE is also discussed with the aid of x-ray photoelectron spectroscopy on the surfaces of clean GaAs before and after exposure to TEG.",

author = "H. Ohno and S. Ohtsuka and H. Ishii and Y. Matsubara and H. Hasegawa",

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doi = "10.1063/1.101195",

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journal = "Applied Physics Letters",

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T1 - Atomic layer epitaxy of GaAs using triethylgallium and arsine

AU - Ohno, H.

AU - Ohtsuka, S.

AU - Ishii, H.

AU - Matsubara, Y.

AU - Hasegawa, H.

PY - 1989

Y1 - 1989

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AB - Atomic layer epitaxy (ALE) of GaAs is realized using triethylgallium (TEG) and arsine in a conventional atmospheric pressure metalorganic vapor phase epitaxy reactor. It is shown that the use of TEG and arsine resulted in ALE growth of GaAs in rather limited ranges of substrate temperature and the TEG supply rate. The mechanism of ALE is also discussed with the aid of x-ray photoelectron spectroscopy on the surfaces of clean GaAs before and after exposure to TEG.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Atomic layer epitaxy of GaAs using triethylgallium and arsine

Abstract

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