Atomic layer processing for doping of SiGe

Bernd Tillack, Yuji Yamamoto, Detlef Bolze, Bernd Heinemann, Holger Rücker, Dieter Knoll, Junichi Murota, Wolfgang Mehr

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


Atomic layer processing has been demonstrated for doping of SiGe during Reduced Pressure Chemical Vapour Deposition (RPCVD) in a commercial single wafer reactor. Atomic level control of dose and location has been obtained for B doping using B2H6 and for P doping using PH3. The main idea of atomic layer processing is the separation of adsorption of the reactant gases from the deposition process. By this way, self-limitation has been shown for P doping. By lowering the temperature for B2H6 exposure (100 °C), the non-self-limiting character of the B doping process can be changed to self-limitation. By this manner, very shallow doping profiles with low sheet resistance have been obtained, capable for future ultra-shallow junction applications. P atomic layer doping is shown to be suitable for the creation of steep and narrow doping profiles suitable for high-performance pnp Heterojunction Bipolar Transistors (HBTs). This result, together with the already demonstrated usage of B atomic layer doping for npn HBTs, demonstrates the capability of the atomic layer processing approach for future devices with critical requirements for dopant dose and location control.

Original languageEnglish
Pages (from-to)279-283
Number of pages5
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2006 Jun 5
Externally publishedYes


  • Atomic layer doping
  • Epitaxy
  • HBT
  • SiGe

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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