Atomic level control in gas source MBE growth of cubic SiC

Tatsuo Yoshinobu, Michiaki Nakayama, Hiromu Shiomi, Takashi Fuyuki, Hiroyuki Matsunami

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Single crystalline cubic SiC was homoepitaxially grown at a substrate temperature of 1000°C by supplying Si2H6 and C2H2 beams alternately to a substrate placed in a high vacuum. The growth mechanism is discussed based on RHEED observations of the transitions in the surface superstructures.

Original languageEnglish
Pages (from-to)520-524
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 1990 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


Dive into the research topics of 'Atomic level control in gas source MBE growth of cubic SiC'. Together they form a unique fingerprint.

Cite this