Single crystalline cubic SiC was homoepitaxially grown at a substrate temperature of 1000°C by supplying Si2H6 and C2H2 beams alternately to a substrate placed in a high vacuum. The growth mechanism is discussed based on RHEED observations of the transitions in the surface superstructures.
|Number of pages||5|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1990 Jan|
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry