Atomic level control in gas source MBE growth of cubic SiC

Tatsuo Yoshinobu; Michiaki Nakayama; Hiromu Shiomi; Takashi Fuyuki; Hiroyuki Matsunami

doi:10.1016/0022-0248(90)90575-6

Atomic level control in gas source MBE growth of cubic SiC

Tatsuo Yoshinobu, Michiaki Nakayama, Hiromu Shiomi, Takashi Fuyuki, Hiroyuki Matsunami

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Single crystalline cubic SiC was homoepitaxially grown at a substrate temperature of 1000°C by supplying Si₂H₆ and C₂H₂ beams alternately to a substrate placed in a high vacuum. The growth mechanism is discussed based on RHEED observations of the transitions in the surface superstructures.

Original language	English
Pages (from-to)	520-524
Number of pages	5
Journal	Journal of Crystal Growth
Volume	99
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(90)90575-6
Publication status	Published - 1990 Jan
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(90)90575-6

Cite this

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title = "Atomic level control in gas source MBE growth of cubic SiC",

abstract = "Single crystalline cubic SiC was homoepitaxially grown at a substrate temperature of 1000°C by supplying Si2H6 and C2H2 beams alternately to a substrate placed in a high vacuum. The growth mechanism is discussed based on RHEED observations of the transitions in the surface superstructures.",

author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",

year = "1990",

month = jan,

doi = "10.1016/0022-0248(90)90575-6",

language = "English",

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journal = "Journal of Crystal Growth",

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T1 - Atomic level control in gas source MBE growth of cubic SiC

AU - Yoshinobu, Tatsuo

AU - Nakayama, Michiaki

AU - Shiomi, Hiromu

AU - Fuyuki, Takashi

AU - Matsunami, Hiroyuki

PY - 1990/1

Y1 - 1990/1

N2 - Single crystalline cubic SiC was homoepitaxially grown at a substrate temperature of 1000°C by supplying Si2H6 and C2H2 beams alternately to a substrate placed in a high vacuum. The growth mechanism is discussed based on RHEED observations of the transitions in the surface superstructures.

AB - Single crystalline cubic SiC was homoepitaxially grown at a substrate temperature of 1000°C by supplying Si2H6 and C2H2 beams alternately to a substrate placed in a high vacuum. The growth mechanism is discussed based on RHEED observations of the transitions in the surface superstructures.

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DO - 10.1016/0022-0248(90)90575-6

M3 - Article

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EP - 524

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Atomic level control in gas source MBE growth of cubic SiC

Abstract

ASJC Scopus subject areas

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