Atomic-order planarization of ultrathin sio2/si(00l) interfaces

Masaaki Niwa; Takashi Kouzaki; Kenji Okada; Masaharu Udagawa; Robert Sinclair

doi:10.1143/JJAP.33.388

Atomic-order planarization of ultrathin sio₂/si(00l) interfaces

Masaaki Niwa, Takashi Kouzaki, Kenji Okada, Masaharu Udagawa, Robert Sinclair

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Conventional wet cleaning and ultrahigh vacuum (UHV) heated cleaning prior to thermal oxidation were compared with respect to their effects on extremely thin SiO₂/Si(001) interface roughness. Atomically flat SiO₂/ Si(001) interfaces were realized by preparing the Si(001) reconstructed surface in UHV followed by thermal oxidation. In contrast to conventional wet cleaning, this planarization is significant in the range of oxide thickness (T_ox) <9 nm which is an important thickness for future gate oxides. As for the conventional wet-cleaned surfaces, maximum roughness of the interface was observed at T_ox ≃4 nm which corresponds to the “initial oxide thickness” which appeared in the oxide growth kinetics.

Original language	English
Pages (from-to)	388-394
Number of pages	7
Journal	Japanese journal of applied physics
Volume	33
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.33.388
Publication status	Published - 1994
Externally published	Yes

Keywords

AFM
Autocovariance function
Initial oxidation
Interface roughness
STM
SiO/Si(001) interface
TEM
UHV cleaning
Ultrathin oxide

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.33.388

Cite this

@article{90b24da4a5064326b7b3d36f3f2dba01,

title = "Atomic-order planarization of ultrathin sio2/si(00l) interfaces",

abstract = "Conventional wet cleaning and ultrahigh vacuum (UHV) heated cleaning prior to thermal oxidation were compared with respect to their effects on extremely thin SiO2/Si(001) interface roughness. Atomically flat SiO2/ Si(001) interfaces were realized by preparing the Si(001) reconstructed surface in UHV followed by thermal oxidation. In contrast to conventional wet cleaning, this planarization is significant in the range of oxide thickness (Tox) <9 nm which is an important thickness for future gate oxides. As for the conventional wet-cleaned surfaces, maximum roughness of the interface was observed at Tox ≃4 nm which corresponds to the “initial oxide thickness” which appeared in the oxide growth kinetics.",

keywords = "AFM, Autocovariance function, Initial oxidation, Interface roughness, STM, SiO/Si(001) interface, TEM, UHV cleaning, Ultrathin oxide",

author = "Masaaki Niwa and Takashi Kouzaki and Kenji Okada and Masaharu Udagawa and Robert Sinclair",

year = "1994",

doi = "10.1143/JJAP.33.388",

language = "English",

volume = "33",

pages = "388--394",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1",

}

TY - JOUR

T1 - Atomic-order planarization of ultrathin sio2/si(00l) interfaces

AU - Niwa, Masaaki

AU - Kouzaki, Takashi

AU - Okada, Kenji

AU - Udagawa, Masaharu

AU - Sinclair, Robert

PY - 1994

Y1 - 1994

N2 - Conventional wet cleaning and ultrahigh vacuum (UHV) heated cleaning prior to thermal oxidation were compared with respect to their effects on extremely thin SiO2/Si(001) interface roughness. Atomically flat SiO2/ Si(001) interfaces were realized by preparing the Si(001) reconstructed surface in UHV followed by thermal oxidation. In contrast to conventional wet cleaning, this planarization is significant in the range of oxide thickness (Tox) <9 nm which is an important thickness for future gate oxides. As for the conventional wet-cleaned surfaces, maximum roughness of the interface was observed at Tox ≃4 nm which corresponds to the “initial oxide thickness” which appeared in the oxide growth kinetics.

AB - Conventional wet cleaning and ultrahigh vacuum (UHV) heated cleaning prior to thermal oxidation were compared with respect to their effects on extremely thin SiO2/Si(001) interface roughness. Atomically flat SiO2/ Si(001) interfaces were realized by preparing the Si(001) reconstructed surface in UHV followed by thermal oxidation. In contrast to conventional wet cleaning, this planarization is significant in the range of oxide thickness (Tox) <9 nm which is an important thickness for future gate oxides. As for the conventional wet-cleaned surfaces, maximum roughness of the interface was observed at Tox ≃4 nm which corresponds to the “initial oxide thickness” which appeared in the oxide growth kinetics.

KW - AFM

KW - Autocovariance function

KW - Initial oxidation

KW - Interface roughness

KW - STM

KW - SiO/Si(001) interface

KW - TEM

KW - UHV cleaning

KW - Ultrathin oxide

UR - http://www.scopus.com/inward/record.url?scp=0028196163&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028196163&partnerID=8YFLogxK

U2 - 10.1143/JJAP.33.388

DO - 10.1143/JJAP.33.388

M3 - Article

AN - SCOPUS:0028196163

SN - 0021-4922

VL - 33

SP - 388

EP - 394

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 1

ER -