Atomic-order nitridation by [formula omitted] on Si(100) and subsequent Si growth by [formula omitted] were investigated using an ultraclean low-pressure chemical vapor deposition system with a Xe flash lamp. In thermal nitridation on Si(100), it is found that nitridation occurs even at 260 °C with flash heating, and the N atom concentration tends to saturate to about [formula omitted] In Si deposition on the ultrathin Si nitride, it is found that N desorption from the Si nitride films hardly occurs, and Si grew on Si nitride at 385 °C in an [formula omitted] environment with and without the flash lamp light irradiation. An incubation period of Si growth is observed and increases with increasing N atom concentration of the Si nitride film. On Si with N atom concentration of about [formula omitted] the incubation period is hardly observed and the reflection high energy electron diffraction patterns indicates that Si epitaxially grew. Layer-by-layer growth control of Si nitride is proposed by combining atomic-order nitridation on Si and atomic-layer growth of Si on the Si nitride.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2001 Jul|