TY - JOUR
T1 - Atomic-resolution analysis for the effects of heat treatment temperatures on the growth of chemically-ordered regions in Pb(Mg1/3Nb2/3)O3 thin films
AU - Fan, Cangyu
AU - Kiguchi, Takanori
AU - Akama, Akihiro
AU - Konno, Toyohiko J.
N1 - Funding Information:
This work was supported by JSPS KAKENHI Grant Numbers 23360283, 21760524, 15H04118, The Research Grant Program of Integrated Materials Research Center for a Low-Carbon Society: LC-IMR, and The Asahi Glass Foundation. The usage of electron microscopy was supported by Dr. Kosei Kobayashi, School of Engineering, Tohoku University.
Publisher Copyright:
© 2016 The Ceramic Society of Japan. All rights reserved.
PY - 2016/6
Y1 - 2016/6
N2 - This paper describes growth behaviors of chemically-ordered regions (CORs) in Pb(Mg1/3Nb2/3)O3 (PMN) epitaxial thin films. The films are crystalized at 650°C, which corresponds to about half of the crystallization temperature of bulk crystals. We obtained PMN epitaxial thin films with high crystallinity by using a metallo-organic decomposition (MOD) process. According to our atomic-resolution analysis using HAADF-STEM images, it is shown that CORs in PMN epitaxial thin films grow by nucleation of small clusters whose sizes are 1 to 2 nm on each side of habit plane, {100} and {110}. In addition, post-annealing process at 700 or 800°C causes growth of CORs. The growth mechanism of CORs is not by the expansion of each cluster but by the nucleation of new clusters. After post-annealing at high temperatures, CORs join with each other on their habit plane and made a network along 〈100〉, 〈110〉 and 〈112〉 direction.
AB - This paper describes growth behaviors of chemically-ordered regions (CORs) in Pb(Mg1/3Nb2/3)O3 (PMN) epitaxial thin films. The films are crystalized at 650°C, which corresponds to about half of the crystallization temperature of bulk crystals. We obtained PMN epitaxial thin films with high crystallinity by using a metallo-organic decomposition (MOD) process. According to our atomic-resolution analysis using HAADF-STEM images, it is shown that CORs in PMN epitaxial thin films grow by nucleation of small clusters whose sizes are 1 to 2 nm on each side of habit plane, {100} and {110}. In addition, post-annealing process at 700 or 800°C causes growth of CORs. The growth mechanism of CORs is not by the expansion of each cluster but by the nucleation of new clusters. After post-annealing at high temperatures, CORs join with each other on their habit plane and made a network along 〈100〉, 〈110〉 and 〈112〉 direction.
KW - Chemical solution deposition (CSD)
KW - Chemically ordered region (COR)
KW - HAADF-STEM
KW - PMN
KW - Thin film
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U2 - 10.2109/jcersj2.16036
DO - 10.2109/jcersj2.16036
M3 - Article
AN - SCOPUS:84971667592
SN - 1882-0743
VL - 124
SP - 697
EP - 701
JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
IS - 6
ER -