Atomic-resolution investigation of irradiation-induced defects in silicon carbide

Chad M. Parish; Takaaki Koyanagi; Sosuke Kondo; Yutai Katoh

doi:10.1017/S143192761400693X

Atomic-resolution investigation of irradiation-induced defects in silicon carbide

Chad M. Parish, Takaaki Koyanagi, Sosuke Kondo, Yutai Katoh

IMR - Materials Design Division

Oak Ridge National Laboratory

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	1042-1043
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	20
Issue number	3
DOIs	https://doi.org/10.1017/S143192761400693X
Publication status	Published - 2014 Aug 1
Event	Microscopy and Microanalysis 2014, M and M 2014 - Hartford, United States Duration: 2014 Aug 3 → 2014 Aug 7

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title = "Atomic-resolution investigation of irradiation-induced defects in silicon carbide",

author = "Parish, {Chad M.} and Takaaki Koyanagi and Sosuke Kondo and Yutai Katoh",

year = "2014",

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AU - Parish, Chad M.

AU - Koyanagi, Takaaki

AU - Kondo, Sosuke

AU - Katoh, Yutai

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DO - 10.1017/S143192761400693X

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SN - 1431-9276

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SP - 1042

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JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - 3

T2 - Microscopy and Microanalysis 2014, M and M 2014

Y2 - 3 August 2014 through 7 August 2014

ER -

Atomic-resolution investigation of irradiation-induced defects in silicon carbide

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