TY - GEN
T1 - Atomically controlled CVD processing for doping in future Si-based devices
AU - Murota, Junichi
AU - Sakuraba, Masao
AU - Tillack, Bernd
N1 - Funding Information:
This work was supported by the National Natural Science Foundation of China (21573232, 21576251, 21676269), National Key Projects for Fundamental Research and Development of China (2016YFA0202801), and Department of Science and Technology of Liaoning province under contract of 2015020086?101.
PY - 2011
Y1 - 2011
N2 - By atomic layer formation of B or P on Si1-xGex(100) surface and subsequent Si capping layer deposition, heavy atomic-layer doping is achieved at temperatures below 500°C B doping dose of about 7×10 14 cm-2 is confined within an about 1 nm thick region, but the sheet carrier concentration is as low as 1.7 ×1013 cm -2. The in-situ B doping in tensile-strained Si epitaxial growth suggests that the low electrical activity is caused by B clustering as well as the increase of interstitial B atoms. For unstrained Si cap layer grown on top of the P atomic layer formed on Si1-xGex(100) with P atom amount below about 4×1014 cm-2 using Si 2H6 instead of SiH4, it is found that tensile-strain in the Si cap layer growth enhances P surface segregation and reduces the incorporated P amount around the heterointerface. The electrical inactive P atoms are generated by tensile-strain in heavy P doped region. These results demonstrate that atomically controlled processing for doping is influenced by strain.
AB - By atomic layer formation of B or P on Si1-xGex(100) surface and subsequent Si capping layer deposition, heavy atomic-layer doping is achieved at temperatures below 500°C B doping dose of about 7×10 14 cm-2 is confined within an about 1 nm thick region, but the sheet carrier concentration is as low as 1.7 ×1013 cm -2. The in-situ B doping in tensile-strained Si epitaxial growth suggests that the low electrical activity is caused by B clustering as well as the increase of interstitial B atoms. For unstrained Si cap layer grown on top of the P atomic layer formed on Si1-xGex(100) with P atom amount below about 4×1014 cm-2 using Si 2H6 instead of SiH4, it is found that tensile-strain in the Si cap layer growth enhances P surface segregation and reduces the incorporated P amount around the heterointerface. The electrical inactive P atoms are generated by tensile-strain in heavy P doped region. These results demonstrate that atomically controlled processing for doping is influenced by strain.
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U2 - 10.1149/1.3600738
DO - 10.1149/1.3600738
M3 - Conference contribution
AN - SCOPUS:84856836768
SN - 9781607682523
T3 - ECS Transactions
SP - 181
EP - 188
BT - 2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
PB - Electrochemical Society Inc.
T2 - 3rd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT III
Y2 - 27 June 2011 through 1 July 2011
ER -