TY - GEN
T1 - Atomically controlled CVD technology for group IV semiconductors
AU - Murota, Junichi
AU - Sakuraba, Masao
AU - Tillack, Bernd
PY - 2006
Y1 - 2006
N2 - One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing based on atomic-order surface reaction control. The main idea of the atomic layer approach is the separation of the surface adsorption of reactant gases from the reaction process. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Moreover, Si or SiGe epitaxial growth over N, P or B layer already-formed on Si(100) or SiGe(100) surface is achieved. Furthermore, the capability of atomically controlled processing for advanced devices is demonstrated. These results open the way to atomically controlled technology for ultra-large-scale integrations.
AB - One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing based on atomic-order surface reaction control. The main idea of the atomic layer approach is the separation of the surface adsorption of reactant gases from the reaction process. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Moreover, Si or SiGe epitaxial growth over N, P or B layer already-formed on Si(100) or SiGe(100) surface is achieved. Furthermore, the capability of atomically controlled processing for advanced devices is demonstrated. These results open the way to atomically controlled technology for ultra-large-scale integrations.
UR - http://www.scopus.com/inward/record.url?scp=34547267091&partnerID=8YFLogxK
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U2 - 10.1109/ICSICT.2006.306295
DO - 10.1109/ICSICT.2006.306295
M3 - Conference contribution
AN - SCOPUS:34547267091
SN - 1424401615
SN - 9781424401611
T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
SP - 440
EP - 443
BT - ICSICT-2006
PB - IEEE Computer Society
T2 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Y2 - 23 October 2006 through 26 October 2006
ER -