Atomically controlled processing for future Si-based devices

Junichi Murota; Masao Sakuraba; Shinobu Takehiro

Atomically controlled processing for future Si-based devices

Junichi Murota, Masao Sakuraba, Shinobu Takehiro

RIEC - Computing System Platforms Division

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here we show the concept of atomically controlled processing based on atomic-order surface reaction control. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (SiH₄, GeH ₄, NH₃, PH₃, CH₄ and SiH ₃CH₃) on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Si epitaxial growth over the N and P layer already-formed on Si(100) surface is achieved. It is found that higher level of electrical P atoms exist in such film, compared with doping under thermal equilibrium conditions. These results open the way to atomically controlled technology for ultralarge-scale integrations.

Original language	English
Title of host publication	2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004
Subtitle of host publication	IEEE Electron Devices 2nd Northwest Regional Meeting
Pages	31-34
Number of pages	4
Publication status	Published - 2004
Event	2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices Northwest Regional Meeting - Boise, ID, United States Duration: 2004 Apr 16 → 2004 Apr 16

Publication series

Name	IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting

Conference

Conference	2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices Northwest Regional Meeting
Country/Territory	United States
City	Boise, ID
Period	04/4/16 → 04/4/16

Keywords

Atomic layer doping
Atomically controlled processing
Chemical vapor deposition
Epitaxial growth
Si-based ultrasmall device

Cite this

Murota, Junichi ; Sakuraba, Masao ; Takehiro, Shinobu. / Atomically controlled processing for future Si-based devices. 2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices 2nd Northwest Regional Meeting. 2004. pp. 31-34 (IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting).

@inproceedings{e9846f6888b04c6eb3dda634a323ab9f,

title = "Atomically controlled processing for future Si-based devices",

abstract = "One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here we show the concept of atomically controlled processing based on atomic-order surface reaction control. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (SiH4, GeH 4, NH3, PH3, CH4 and SiH 3CH3) on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Si epitaxial growth over the N and P layer already-formed on Si(100) surface is achieved. It is found that higher level of electrical P atoms exist in such film, compared with doping under thermal equilibrium conditions. These results open the way to atomically controlled technology for ultralarge-scale integrations.",

keywords = "Atomic layer doping, Atomically controlled processing, Chemical vapor deposition, Epitaxial growth, Si-based ultrasmall device",

author = "Junichi Murota and Masao Sakuraba and Shinobu Takehiro",

year = "2004",

language = "English",

isbn = "0780383699",

series = "IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting",

pages = "31--34",

booktitle = "2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004",

note = "2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices Northwest Regional Meeting ; Conference date: 16-04-2004 Through 16-04-2004",

}

Murota, J, Sakuraba, M & Takehiro, S 2004, Atomically controlled processing for future Si-based devices. in 2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices 2nd Northwest Regional Meeting. IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting, pp. 31-34, 2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices Northwest Regional Meeting, Boise, ID, United States, 04/4/16.

Atomically controlled processing for future Si-based devices. / Murota, Junichi; Sakuraba, Masao; Takehiro, Shinobu.
2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices 2nd Northwest Regional Meeting. 2004. p. 31-34 (IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Atomically controlled processing for future Si-based devices

AU - Murota, Junichi

AU - Sakuraba, Masao

AU - Takehiro, Shinobu

PY - 2004

Y1 - 2004

N2 - One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here we show the concept of atomically controlled processing based on atomic-order surface reaction control. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (SiH4, GeH 4, NH3, PH3, CH4 and SiH 3CH3) on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Si epitaxial growth over the N and P layer already-formed on Si(100) surface is achieved. It is found that higher level of electrical P atoms exist in such film, compared with doping under thermal equilibrium conditions. These results open the way to atomically controlled technology for ultralarge-scale integrations.

AB - One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here we show the concept of atomically controlled processing based on atomic-order surface reaction control. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (SiH4, GeH 4, NH3, PH3, CH4 and SiH 3CH3) on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Si epitaxial growth over the N and P layer already-formed on Si(100) surface is achieved. It is found that higher level of electrical P atoms exist in such film, compared with doping under thermal equilibrium conditions. These results open the way to atomically controlled technology for ultralarge-scale integrations.

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KW - Atomically controlled processing

KW - Chemical vapor deposition

KW - Epitaxial growth

KW - Si-based ultrasmall device

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BT - 2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004

T2 - 2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices Northwest Regional Meeting

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ER -

Atomically controlled processing for future Si-based devices

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