@inproceedings{5082dda8f09846758ba2d8ec46727720,
title = "Atomically flat interface for noise reduction in SOI-MOSFETs",
abstract = "New process conditions involving temperature below 900°C, and then compatible with SOI wafers and CMOS technologies, were successfully developed in order to realize atomic flat interface in MOSFETs. The implementation of these processes did not only reduce the variability of electrical performances but also brought the low frequency noise level down, making MOSFETs fabricated on atomically flat surfaces superior to non processed MOSFETs in all aspects. The newly developed low-temperature atomic flat process is paving the way to high-performance high-reliability and low-noise MOSFETs for the realization of the next VLSI on SOI technology.",
keywords = "atomic, electron, flat, interface, low frequency noise, MOSFET, process, RTN, SOI, temperature",
author = "Philippe Gaubert and Alexandre Kircher and Hyeonwoo Park and Rihito Kuroda and Shigetoshi Sugawa and Tetsuya Goto and Tomoyuki Suwa and Akinobu Teramoto",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 International Conference on Noise and Fluctuations, ICNF 2017 ; Conference date: 20-06-2017 Through 23-06-2017",
year = "2017",
month = jul,
day = "19",
doi = "10.1109/ICNF.2017.7985986",
language = "English",
series = "2017 International Conference on Noise and Fluctuations, ICNF 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2017 International Conference on Noise and Fluctuations, ICNF 2017",
address = "United States",
}