Atomically flat, ultra thin-SiO2/Si(001) interface formation by UHV heating

Masaaki Niwa, Kenji Okada, Robert Sinclair

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Conventional wet cleaning and ultrahigh vacuum (UHV) heated cleaning prior to thermal oxidation were compared with respect to their effects on extremely thin SiO2/Si(001) interface roughness. Atomically flat SiO2/Si(001) interfaces were realized by preparing the Si(001)-2 × 1 surface in UHV followed by thermal oxidation. This planarization is significant in the range of oxide thickness (Tox < ~∼ 9 nm). As for the 'wet-cleaned' surfaces, a wide variety of the interface roughness was observed at Tox < ∼ 4 nm which corresponds to the 'initial oxide thickness (Tio)' which appeared in the oxide growth kinetics. The electron scattering caused by the interface roughness might degrade the inversion electron mobility for the 'wet-cleaned' sample at Tox < Tio.

Original languageEnglish
Pages (from-to)425-430
Number of pages6
JournalApplied Surface Science
Publication statusPublished - 1996 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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