TY - JOUR
T1 - Atomistic structure of stacking faults in a commercial GaAs:Si wafer revealed by cross-sectional scanning tunneling microscopy
AU - Ohno, Y.
AU - Taishi, T.
AU - Yonenaga, I.
AU - Takeda, S.
N1 - Funding Information:
This work was partially supported by the Ministry of Education, Culture, Sports, Science, and Technology, Grant-in-Aid for Scientific Research (B), no. 19310072, 2007–2009. Samples were provided by Mitsubishi Chemical Co.
PY - 2007/12/15
Y1 - 2007/12/15
N2 - A Frank-type stacking fault bounded by a partial dislocation, about a few nanometers in size, was observed in a commercial GaAs:Si wafer (with the Si concentration of ∼ 1018 cm- 3) annealed at the temperature of about 950 K, by cross-sectional scanning tunneling microscopy. There existed no charge around the stacking fault, unlike in heavily Si-doped GaAs. There was a localized energy level associated with the stacking fault, as expected theoretically in the pure stacking fault in which Si atoms do not exist.
AB - A Frank-type stacking fault bounded by a partial dislocation, about a few nanometers in size, was observed in a commercial GaAs:Si wafer (with the Si concentration of ∼ 1018 cm- 3) annealed at the temperature of about 950 K, by cross-sectional scanning tunneling microscopy. There existed no charge around the stacking fault, unlike in heavily Si-doped GaAs. There was a localized energy level associated with the stacking fault, as expected theoretically in the pure stacking fault in which Si atoms do not exist.
KW - Cross-sectional scanning tunneling microscopy
KW - Si-doped GaAs
KW - Stacking faults
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U2 - 10.1016/j.physb.2007.08.154
DO - 10.1016/j.physb.2007.08.154
M3 - Article
AN - SCOPUS:36048957575
SN - 0921-4526
VL - 401-402
SP - 230
EP - 233
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
ER -