Autocatalytic reaction model: A phenomenology for nucleation-coalescence-growth of thin films

Maki Suemitsu, Hideaki Togashi, Toshimi Abe

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


In many thin film growth systems, the surface morphology develops via nucleation of two-dimensional clusters, their growth and coalescence. When desorption of surface adsorbate is thermally activated, time evolution of the film's coverage becomes a delicate function of both the temperature and pressure of the growth. The autocatalytic reaction (ACR) model, a rate equation known in chemical kinetics, is a powerful tool to describe such complicated temporal behaviors, and is successfully applied to analysis of dry oxidation at Si(001)-2×1 surfaces. Monte Carlo simulation indicates that the physics behind the ACR model lies in its effective inclusion of nucleation, growth, and coalescence processes.

Original languageEnglish
Pages (from-to)83-86
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2003 Mar 20
EventProceedings of Symposium J on Growth and Evolution - Strasbourg, France
Duration: 2002 Jun 182002 Jun 21


  • Autocatalytic reaction
  • Coalescence of islands
  • Island growth
  • Si oxidation
  • Thin film growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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