Abstract
In many thin film growth systems, the surface morphology develops via nucleation of two-dimensional clusters, their growth and coalescence. When desorption of surface adsorbate is thermally activated, time evolution of the film's coverage becomes a delicate function of both the temperature and pressure of the growth. The autocatalytic reaction (ACR) model, a rate equation known in chemical kinetics, is a powerful tool to describe such complicated temporal behaviors, and is successfully applied to analysis of dry oxidation at Si(001)-2×1 surfaces. Monte Carlo simulation indicates that the physics behind the ACR model lies in its effective inclusion of nucleation, growth, and coalescence processes.
| Original language | English |
|---|---|
| Pages (from-to) | 83-86 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 428 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2003 Mar 20 |
| Event | Proceedings of Symposium J on Growth and Evolution - Strasbourg, France Duration: 2002 Jun 18 → 2002 Jun 21 |
Keywords
- Autocatalytic reaction
- Coalescence of islands
- Island growth
- Si oxidation
- Thin film growth
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry