TY - JOUR
T1 - Availability of Cr-rich Cr-Si solvent for rapid solution growth of 4H-SiC
AU - Kawanishi, Sakiko
AU - Nagamatsu, Yoichiro
AU - Yoshikawa, Takeshi
AU - Shibata, Hiroyuki
N1 - Funding Information:
The authors would like to thank Prof. Totsu from Tohoku University for help with the X-ray computational tomography equipment. Additionally, the authors would like to thank Mr. Saito from Tohoku University for designing and fabricating the mechanical parts in the solution growth system. This research was partly supported by JSPS KAKENHI 17H04960 , 18K189340 , and 19580017 , and the Cooperative Research Program of “Network Joint Research Center for Materials and Devices.” Furthermore , this study was partly supported by Tohoku University Nanotechnology Platform Project sponsored by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan ( JPMX09F-17-TU-0079 ).
Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2020/11/1
Y1 - 2020/11/1
N2 - In this study, we verified the potential of Cr-rich Cr-Si solvent for the rapid solution growth of 4H-SiC using three different compositional alloys to introduce a perspective of the solvent design for SiC crystal growth. Based on the temperature dependencies of C solubility in Cr-Si alloys, the Cr-rich Cr-Si solvent was found to have a larger C supersaturation (ΔXC) and a smaller relative supersaturation (σ), which accounted for approximately thrice and less than 1/10, respectively, than those of the Si-rich solvent. Because of the large ΔXC, the sizable SiC growth rates of 1220 and 1310 μm h−1 were obtained at 1933 K using the Cr-27.5 mol%Si and Cr-45 mol%Si solvents, respectively. The polytype inclusion of 3C-SiC significantly decreased when the Cr-27.5 mol%Si solvent was used in comparison with the Cr-45 mol%Si and Cr-60 mol%Si solvents because of its small σ. The obtained maximum growth rates using Cr-rich solvents were more than six times higher than those obtained using the Si-rich solvent. Hence, the high potential of the Cr-rich Cr-Si solvent in achieving a more rapid growth of 4H-SiC than the conventional Si-rich Cr-Si solvent was clarified.
AB - In this study, we verified the potential of Cr-rich Cr-Si solvent for the rapid solution growth of 4H-SiC using three different compositional alloys to introduce a perspective of the solvent design for SiC crystal growth. Based on the temperature dependencies of C solubility in Cr-Si alloys, the Cr-rich Cr-Si solvent was found to have a larger C supersaturation (ΔXC) and a smaller relative supersaturation (σ), which accounted for approximately thrice and less than 1/10, respectively, than those of the Si-rich solvent. Because of the large ΔXC, the sizable SiC growth rates of 1220 and 1310 μm h−1 were obtained at 1933 K using the Cr-27.5 mol%Si and Cr-45 mol%Si solvents, respectively. The polytype inclusion of 3C-SiC significantly decreased when the Cr-27.5 mol%Si solvent was used in comparison with the Cr-45 mol%Si and Cr-60 mol%Si solvents because of its small σ. The obtained maximum growth rates using Cr-rich solvents were more than six times higher than those obtained using the Si-rich solvent. Hence, the high potential of the Cr-rich Cr-Si solvent in achieving a more rapid growth of 4H-SiC than the conventional Si-rich Cr-Si solvent was clarified.
KW - A1. Solubility
KW - A2. Growth from solutions
KW - B1. Chromium-silicon alloys
KW - B1. Silicon carbide
KW - B2. Semiconducting silicon compounds
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U2 - 10.1016/j.jcrysgro.2020.125877
DO - 10.1016/j.jcrysgro.2020.125877
M3 - Article
AN - SCOPUS:85091493038
SN - 0022-0248
VL - 549
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 125877
ER -