Azafullerene (C59N)2 thin-film field-effect transistors

Ryotaro Kumashiro; Katsumi Tanigaki; Hirotaka Ohashi; Nikos Tagmatarchis; Haruhito Kato; Hisanori Shinohara; Takeshi Akasaka; Kenichi Kato; Shinobu Aoyagi; Shigeru Kimura; Masaki Takata

doi:10.1063/1.1667013

Azafullerene (C⁵⁹N)₂ thin-film field-effect transistors

Ryotaro Kumashiro, Katsumi Tanigaki, Hirotaka Ohashi, Nikos Tagmatarchis, Haruhito Kato, Hisanori Shinohara, Takeshi Akasaka, Kenichi Kato, Shinobu Aoyagi, Shigeru Kimura, Masaki Takata

SRIS - SR Core Research Division

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The fabrication of the azafullerene (C₅₉N)₂ thin film field-effect transistors (FET) was presented. The properties of the FET, including electron carrier mobility, were also analyzed. The x-ray diffraction analysis was used for the study. It was observed that the azafullerene FET showed n-channel characteristics with on-off current ratio of 10³ and field-effect electron mobility of 3.8×10^-4 cm² V^-1 s^-1 at room temperature.

Original language	English
Pages (from-to)	2154-2156
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	12
DOIs	https://doi.org/10.1063/1.1667013
Publication status	Published - 2004 Mar 22

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10.1063/1.1667013

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title = "Azafullerene (C59N)2 thin-film field-effect transistors",

abstract = "The fabrication of the azafullerene (C59N)2 thin film field-effect transistors (FET) was presented. The properties of the FET, including electron carrier mobility, were also analyzed. The x-ray diffraction analysis was used for the study. It was observed that the azafullerene FET showed n-channel characteristics with on-off current ratio of 103 and field-effect electron mobility of 3.8×10-4 cm2 V-1 s-1 at room temperature.",

author = "Ryotaro Kumashiro and Katsumi Tanigaki and Hirotaka Ohashi and Nikos Tagmatarchis and Haruhito Kato and Hisanori Shinohara and Takeshi Akasaka and Kenichi Kato and Shinobu Aoyagi and Shigeru Kimura and Masaki Takata",

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T1 - Azafullerene (C59N)2 thin-film field-effect transistors

AU - Kumashiro, Ryotaro

AU - Tanigaki, Katsumi

AU - Ohashi, Hirotaka

AU - Tagmatarchis, Nikos

AU - Kato, Haruhito

AU - Shinohara, Hisanori

AU - Akasaka, Takeshi

AU - Kato, Kenichi

AU - Aoyagi, Shinobu

AU - Kimura, Shigeru

AU - Takata, Masaki

PY - 2004/3/22

Y1 - 2004/3/22

N2 - The fabrication of the azafullerene (C59N)2 thin film field-effect transistors (FET) was presented. The properties of the FET, including electron carrier mobility, were also analyzed. The x-ray diffraction analysis was used for the study. It was observed that the azafullerene FET showed n-channel characteristics with on-off current ratio of 103 and field-effect electron mobility of 3.8×10-4 cm2 V-1 s-1 at room temperature.

AB - The fabrication of the azafullerene (C59N)2 thin film field-effect transistors (FET) was presented. The properties of the FET, including electron carrier mobility, were also analyzed. The x-ray diffraction analysis was used for the study. It was observed that the azafullerene FET showed n-channel characteristics with on-off current ratio of 103 and field-effect electron mobility of 3.8×10-4 cm2 V-1 s-1 at room temperature.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Azafullerene (C⁵⁹N)₂ thin-film field-effect transistors

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