Azafullerene (C59N)2 thin-film field-effect transistors

Ryotaro Kumashiro, Katsumi Tanigaki, Hirotaka Ohashi, Nikos Tagmatarchis, Haruhito Kato, Hisanori Shinohara, Takeshi Akasaka, Kenichi Kato, Shinobu Aoyagi, Shigeru Kimura, Masaki Takata

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


The fabrication of the azafullerene (C59N)2 thin film field-effect transistors (FET) was presented. The properties of the FET, including electron carrier mobility, were also analyzed. The x-ray diffraction analysis was used for the study. It was observed that the azafullerene FET showed n-channel characteristics with on-off current ratio of 103 and field-effect electron mobility of 3.8×10-4 cm2 V-1 s-1 at room temperature.

Original languageEnglish
Pages (from-to)2154-2156
Number of pages3
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2004 Mar 22


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