Back-gate control in an InAs-based two-dimensional system

K. Suzuki; S. Miyashita; Y. Hirayama

doi:10.1016/S0921-4534(00)01706-8

Back-gate control in an InAs-based two-dimensional system

K. Suzuki, S. Miyashita, Y. Hirayama

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

Abstract

Growing a heterostructure on a conductive substrate, the channel carrier density can be controlled by an applied gate voltage to the substrate. We made InAs/AlGaSb single-quantum wells using n- and p-type InAs substrates as a back-gate. The devices perform well and the gate-leakage characteristics are better for the n-type substrates than for the p-type substrates.

Original language	English
Pages (from-to)	125-127
Number of pages	3
Journal	Physica C: Superconductivity and its Applications
Volume	352
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4534(00)01706-8
Publication status	Published - 2001 Apr

Keywords

Back gate
InAs
Quantum Hall effect

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10.1016/S0921-4534(00)01706-8

Cite this

@article{e2ad19e1bc9c48b48b4fb1f2e5677580,

title = "Back-gate control in an InAs-based two-dimensional system",

abstract = "Growing a heterostructure on a conductive substrate, the channel carrier density can be controlled by an applied gate voltage to the substrate. We made InAs/AlGaSb single-quantum wells using n- and p-type InAs substrates as a back-gate. The devices perform well and the gate-leakage characteristics are better for the n-type substrates than for the p-type substrates.",

keywords = "Back gate, InAs, Quantum Hall effect",

author = "K. Suzuki and S. Miyashita and Y. Hirayama",

year = "2001",

month = apr,

doi = "10.1016/S0921-4534(00)01706-8",

language = "English",

volume = "352",

pages = "125--127",

journal = "Physica C: Superconductivity and its Applications",

issn = "0921-4534",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Back-gate control in an InAs-based two-dimensional system

AU - Suzuki, K.

AU - Miyashita, S.

AU - Hirayama, Y.

PY - 2001/4

Y1 - 2001/4

N2 - Growing a heterostructure on a conductive substrate, the channel carrier density can be controlled by an applied gate voltage to the substrate. We made InAs/AlGaSb single-quantum wells using n- and p-type InAs substrates as a back-gate. The devices perform well and the gate-leakage characteristics are better for the n-type substrates than for the p-type substrates.

AB - Growing a heterostructure on a conductive substrate, the channel carrier density can be controlled by an applied gate voltage to the substrate. We made InAs/AlGaSb single-quantum wells using n- and p-type InAs substrates as a back-gate. The devices perform well and the gate-leakage characteristics are better for the n-type substrates than for the p-type substrates.

KW - Back gate

KW - InAs

KW - Quantum Hall effect

UR - http://www.scopus.com/inward/record.url?scp=0035306018&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035306018&partnerID=8YFLogxK

U2 - 10.1016/S0921-4534(00)01706-8

DO - 10.1016/S0921-4534(00)01706-8

M3 - Article

AN - SCOPUS:0035306018

SN - 0921-4534

VL - 352

SP - 125

EP - 127

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

IS - 1-4

ER -

Back-gate control in an InAs-based two-dimensional system

Abstract

Keywords

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