Background charge fluctuation in a GaAs quantum dot device

S. W. Jung; T. Fujisawa; Y. Hirayama; Y. H. Jeong

doi:10.1063/1.1777802

Background charge fluctuation in a GaAs quantum dot device

S. W. Jung, T. Fujisawa, Y. Hirayama, Y. H. Jeong

Center for Science and Innovation in Spintronics (CSIS)

Research output: Contribution to journal › Article › peer-review

83 Citations (Scopus)

Abstract

The 1/f noise in a tunnelling current through a GaAs quantum dot (QD) was investigated. The fluctuation of the tunnelling current was measured with a spectrum analyzer. It was observed that the potential fluctuation increased linearly with temperature. A very slight increase in the fluctuation was observed when electrons were injected into excited states of the quantum dot. The results show that the current noise can be understood as a fluctuation of the confinement potential.

Original language	English
Pages (from-to)	768-770
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	5
DOIs	https://doi.org/10.1063/1.1777802
Publication status	Published - 2004 Aug 2

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title = "Background charge fluctuation in a GaAs quantum dot device",

abstract = "The 1/f noise in a tunnelling current through a GaAs quantum dot (QD) was investigated. The fluctuation of the tunnelling current was measured with a spectrum analyzer. It was observed that the potential fluctuation increased linearly with temperature. A very slight increase in the fluctuation was observed when electrons were injected into excited states of the quantum dot. The results show that the current noise can be understood as a fluctuation of the confinement potential.",

author = "Jung, {S. W.} and T. Fujisawa and Y. Hirayama and Jeong, {Y. H.}",

note = "Funding Information: This work was partially supported by BK 21 of Korea.",

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AU - Jeong, Y. H.

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Y1 - 2004/8/2

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Background charge fluctuation in a GaAs quantum dot device

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