Background charge fluctuation in a GaAs quantum dot device

S. W. Jung, T. Fujisawa, Y. Hirayama, Y. H. Jeong

Research output: Contribution to journalArticlepeer-review

83 Citations (Scopus)


The 1/f noise in a tunnelling current through a GaAs quantum dot (QD) was investigated. The fluctuation of the tunnelling current was measured with a spectrum analyzer. It was observed that the potential fluctuation increased linearly with temperature. A very slight increase in the fluctuation was observed when electrons were injected into excited states of the quantum dot. The results show that the current noise can be understood as a fluctuation of the confinement potential.

Original languageEnglish
Pages (from-to)768-770
Number of pages3
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2004 Aug 2


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