Ballistic electron propagation in macroscopic four-terminal structures and its gate controlled transmission and reflection

Seigo Tarucha; Yoshino K. Fukai; Yoshiro Hirayama; Tadashi Saku

doi:10.1016/0039-6028(92)90346-8

Ballistic electron propagation in macroscopic four-terminal structures and its gate controlled transmission and reflection

Seigo Tarucha, Yoshino K. Fukai, Yoshiro Hirayama, Tadashi Saku

Research output: Contribution to journal › Article › peer-review

Abstract

Ballistic electron transport in macroscopic four-terminal devices with a high electron mobility is studied. The bend resistance characteristics are well analyzed using the Landauer-Büttiker formula although the leads are too wide to form well-defined one-dimensional subbands. The ballistic length determined from this analysis agrees well with the mean free path deduced from a mobility and electron density. Transmission and reflection of ballistic electrons are manipulated using a strip gate placed so as to bisect the device. The transmission and reflection probabilities are determined as a function of gate voltage, and related to the change in the refraction of ballistic electron propagation across the regions of different electron densities.

Original language	English
Pages (from-to)	253-257
Number of pages	5
Journal	Surface Science
Volume	263
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(92)90346-8
Publication status	Published - 1992 Feb 19
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(92)90346-8

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title = "Ballistic electron propagation in macroscopic four-terminal structures and its gate controlled transmission and reflection",

abstract = "Ballistic electron transport in macroscopic four-terminal devices with a high electron mobility is studied. The bend resistance characteristics are well analyzed using the Landauer-B{\"u}ttiker formula although the leads are too wide to form well-defined one-dimensional subbands. The ballistic length determined from this analysis agrees well with the mean free path deduced from a mobility and electron density. Transmission and reflection of ballistic electrons are manipulated using a strip gate placed so as to bisect the device. The transmission and reflection probabilities are determined as a function of gate voltage, and related to the change in the refraction of ballistic electron propagation across the regions of different electron densities.",

author = "Seigo Tarucha and Fukai, {Yoshino K.} and Yoshiro Hirayama and Tadashi Saku",

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T1 - Ballistic electron propagation in macroscopic four-terminal structures and its gate controlled transmission and reflection

AU - Tarucha, Seigo

AU - Fukai, Yoshino K.

AU - Hirayama, Yoshiro

AU - Saku, Tadashi

PY - 1992/2/19

Y1 - 1992/2/19

N2 - Ballistic electron transport in macroscopic four-terminal devices with a high electron mobility is studied. The bend resistance characteristics are well analyzed using the Landauer-Büttiker formula although the leads are too wide to form well-defined one-dimensional subbands. The ballistic length determined from this analysis agrees well with the mean free path deduced from a mobility and electron density. Transmission and reflection of ballistic electrons are manipulated using a strip gate placed so as to bisect the device. The transmission and reflection probabilities are determined as a function of gate voltage, and related to the change in the refraction of ballistic electron propagation across the regions of different electron densities.

AB - Ballistic electron transport in macroscopic four-terminal devices with a high electron mobility is studied. The bend resistance characteristics are well analyzed using the Landauer-Büttiker formula although the leads are too wide to form well-defined one-dimensional subbands. The ballistic length determined from this analysis agrees well with the mean free path deduced from a mobility and electron density. Transmission and reflection of ballistic electrons are manipulated using a strip gate placed so as to bisect the device. The transmission and reflection probabilities are determined as a function of gate voltage, and related to the change in the refraction of ballistic electron propagation across the regions of different electron densities.

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JO - Surface Science

JF - Surface Science

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ER -

Ballistic electron propagation in macroscopic four-terminal structures and its gate controlled transmission and reflection

Abstract

ASJC Scopus subject areas

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