Ballistic electron transport in macroscopic four-terminal square structures with high mobility

Y. Hirayama; T. Saku; S. Tarucha; Y. Horikoshi

doi:10.1063/1.104803

Ballistic electron transport in macroscopic four-terminal square structures with high mobility

Y. Hirayama, T. Saku, S. Tarucha, Y. Horikoshi

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

Ballistic electron transport characteristics are studied using macroscopic four-terminal square structures formed in high-mobility wafers (μ=7.8×10⁶ cm²/V s at 1.5 K). Ballistic transport over 200 μm can be detected as a negative peak in resistance around B=0 T when four-terminal resistance is measured as a function of magnetic field. The ballistic mean free path (l_b) of electrons is evaluated from the size dependence of the negative peak height. The estimated l_b becomes 86 μm, which is approximately equal to a conventional mean free path calculated from carrier density and mobility of the wafer.

Original language	English
Pages (from-to)	2672-2674
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	23
DOIs	https://doi.org/10.1063/1.104803
Publication status	Published - 1991

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abstract = "Ballistic electron transport characteristics are studied using macroscopic four-terminal square structures formed in high-mobility wafers (μ=7.8×106 cm2/V s at 1.5 K). Ballistic transport over 200 μm can be detected as a negative peak in resistance around B=0 T when four-terminal resistance is measured as a function of magnetic field. The ballistic mean free path (lb) of electrons is evaluated from the size dependence of the negative peak height. The estimated lb becomes 86 μm, which is approximately equal to a conventional mean free path calculated from carrier density and mobility of the wafer.",

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AU - Saku, T.

AU - Tarucha, S.

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N2 - Ballistic electron transport characteristics are studied using macroscopic four-terminal square structures formed in high-mobility wafers (μ=7.8×106 cm2/V s at 1.5 K). Ballistic transport over 200 μm can be detected as a negative peak in resistance around B=0 T when four-terminal resistance is measured as a function of magnetic field. The ballistic mean free path (lb) of electrons is evaluated from the size dependence of the negative peak height. The estimated lb becomes 86 μm, which is approximately equal to a conventional mean free path calculated from carrier density and mobility of the wafer.

AB - Ballistic electron transport characteristics are studied using macroscopic four-terminal square structures formed in high-mobility wafers (μ=7.8×106 cm2/V s at 1.5 K). Ballistic transport over 200 μm can be detected as a negative peak in resistance around B=0 T when four-terminal resistance is measured as a function of magnetic field. The ballistic mean free path (lb) of electrons is evaluated from the size dependence of the negative peak height. The estimated lb becomes 86 μm, which is approximately equal to a conventional mean free path calculated from carrier density and mobility of the wafer.

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Ballistic electron transport in macroscopic four-terminal square structures with high mobility

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