Ballistic electron transport in macroscopic high mobility structures

Y. Hirayama; S. Tarucha; T. Saku; Y. Horikoshi

doi:10.1016/0921-4526(91)90722-Q

Ballistic electron transport in macroscopic high mobility structures

Y. Hirayama, S. Tarucha, T. Saku, Y. Horikoshi

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigate ballistic transport characteristics of macroscopic four-terminal structures fabricated from a high mobility (7.8 × 10⁶ cm²/Vs at 1.5 K) two-dimensional electron gas at the AlGaAs-GaAs heterointerface. Ballistic electron transport over 200 μm is confirmed from the experimental results. The obtained transport characteristics are well explained by Landauer-Büttiker equation based analysis in spite of the terminal width being larger than 3 μm.

Original language	English
Pages (from-to)	247-252
Number of pages	6
Journal	Physica B: Condensed Matter
Volume	175
Issue number	1-3
DOIs	https://doi.org/10.1016/0921-4526(91)90722-Q
Publication status	Published - 1991 Dec 1

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title = "Ballistic electron transport in macroscopic high mobility structures",

abstract = "We investigate ballistic transport characteristics of macroscopic four-terminal structures fabricated from a high mobility (7.8 × 106 cm2/Vs at 1.5 K) two-dimensional electron gas at the AlGaAs-GaAs heterointerface. Ballistic electron transport over 200 μm is confirmed from the experimental results. The obtained transport characteristics are well explained by Landauer-B{\"u}ttiker equation based analysis in spite of the terminal width being larger than 3 μm.",

author = "Y. Hirayama and S. Tarucha and T. Saku and Y. Horikoshi",

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AU - Hirayama, Y.

AU - Tarucha, S.

AU - Saku, T.

AU - Horikoshi, Y.

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Y1 - 1991/12/1

N2 - We investigate ballistic transport characteristics of macroscopic four-terminal structures fabricated from a high mobility (7.8 × 106 cm2/Vs at 1.5 K) two-dimensional electron gas at the AlGaAs-GaAs heterointerface. Ballistic electron transport over 200 μm is confirmed from the experimental results. The obtained transport characteristics are well explained by Landauer-Büttiker equation based analysis in spite of the terminal width being larger than 3 μm.

AB - We investigate ballistic transport characteristics of macroscopic four-terminal structures fabricated from a high mobility (7.8 × 106 cm2/Vs at 1.5 K) two-dimensional electron gas at the AlGaAs-GaAs heterointerface. Ballistic electron transport over 200 μm is confirmed from the experimental results. The obtained transport characteristics are well explained by Landauer-Büttiker equation based analysis in spite of the terminal width being larger than 3 μm.

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Ballistic electron transport in macroscopic high mobility structures

Abstract

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