Ballistic transport in induced one-dimensional hole systems

O. Klochan; W. R. Clarke; R. Danneau; A. P. Micolich; L. H. Ho; A. R. Hamilton; K. Muraki; Y. Hirayama

doi:10.1063/1.2337525

Ballistic transport in induced one-dimensional hole systems

O. Klochan, W. R. Clarke, R. Danneau, A. P. Micolich, L. H. Ho, A. R. Hamilton, K. Muraki, Y. Hirayama

Center for Science and Innovation in Spintronics (CSIS)

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

The authors have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities and, in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where r_s > 10.

Original language	English
Article number	092105
Journal	Applied Physics Letters
Volume	89
Issue number	9
DOIs	https://doi.org/10.1063/1.2337525
Publication status	Published - 2006

Access to Document

10.1063/1.2337525

Cite this

@article{c935cf5694c34489a0fccea1998230e7,

title = "Ballistic transport in induced one-dimensional hole systems",

abstract = "The authors have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities and, in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where rs > 10.",

author = "O. Klochan and Clarke, {W. R.} and R. Danneau and Micolich, {A. P.} and Ho, {L. H.} and Hamilton, {A. R.} and K. Muraki and Y. Hirayama",

note = "Funding Information: This work was funded by Australian Research Council. One of the authors (O.K.) acknowledges support from the UNSW IPRS scheme. Two authors (A.P.M. and R.D.) acknowledge an ARC Postdoctoral Fellowship.",

year = "2006",

doi = "10.1063/1.2337525",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Ballistic transport in induced one-dimensional hole systems

AU - Klochan, O.

AU - Clarke, W. R.

AU - Danneau, R.

AU - Micolich, A. P.

AU - Ho, L. H.

AU - Hamilton, A. R.

AU - Muraki, K.

AU - Hirayama, Y.

N1 - Funding Information: This work was funded by Australian Research Council. One of the authors (O.K.) acknowledges support from the UNSW IPRS scheme. Two authors (A.P.M. and R.D.) acknowledge an ARC Postdoctoral Fellowship.

PY - 2006

Y1 - 2006

N2 - The authors have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities and, in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where rs > 10.

AB - The authors have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities and, in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where rs > 10.

UR - http://www.scopus.com/inward/record.url?scp=33748248804&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748248804&partnerID=8YFLogxK

U2 - 10.1063/1.2337525

DO - 10.1063/1.2337525

M3 - Article

AN - SCOPUS:33748248804

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 092105

ER -

Ballistic transport in induced one-dimensional hole systems

Abstract

Access to Document

Other files and links

Fingerprint

Cite this