Band alignment at a ZnO/GaN (0001) heterointerface

Soon Ku Hong, Takashi Hanada, Hisao Makino, Yefan Chen, Hang Ju Ko, Takafumi Yao, Akinori Tanaka, Hiroyuki Sasaki, Shigeru Sato

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130 Citations (Scopus)


We report the experimental results of the valence band offset at a ZnO/GaN (0001) heterointerface. The ZnO/GaN (0001) heterointerface is prepared by growing a ZnO layer on (0001) GaN/Al2O3, in which the ZnO layer is epitaxially deposited by plasma-assisted molecular-beam epitaxy, while the GaN template is prepared by metalorganic chemical-vapor deposition. Ex situ ultraviolet and x-ray photoelectron spectroscopy have been used to measure the valence band offset ΔEv. The photoelectron spectroscopy measurements are done before and after Ar+ ion cleaning of the surfaces. Type-II band alignments with band offsets of ΔEv= 1.0eV (before cleaning) and 0.8 eV (after cleaning) with the valence band maximum of GaN being placed above that of ZnO are obtained.

Original languageEnglish
Pages (from-to)3349-3351
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2001 May 21


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