Band alignment at a ZnO/GaN (0001) heterointerface

Soon Ku Hong; Takashi Hanada; Hisao Makino; Yefan Chen; Hang Ju Ko; Takafumi Yao; Akinori Tanaka; Hiroyuki Sasaki; Shigeru Sato

doi:10.1063/1.1372339

Band alignment at a ZnO/GaN (0001) heterointerface

Soon Ku Hong, Takashi Hanada, Hisao Makino, Yefan Chen, Hang Ju Ko, Takafumi Yao, Akinori Tanaka, Hiroyuki Sasaki, Shigeru Sato

IMR - Materials Design Division

Tohoku University

Research output: Contribution to journal › Article › peer-review

130 Citations (Scopus)

Abstract

We report the experimental results of the valence band offset at a ZnO/GaN (0001) heterointerface. The ZnO/GaN (0001) heterointerface is prepared by growing a ZnO layer on (0001) GaN/Al₂O₃, in which the ZnO layer is epitaxially deposited by plasma-assisted molecular-beam epitaxy, while the GaN template is prepared by metalorganic chemical-vapor deposition. Ex situ ultraviolet and x-ray photoelectron spectroscopy have been used to measure the valence band offset ΔE_v. The photoelectron spectroscopy measurements are done before and after Ar⁺ ion cleaning of the surfaces. Type-II band alignments with band offsets of ΔE_v= 1.0eV (before cleaning) and 0.8 eV (after cleaning) with the valence band maximum of GaN being placed above that of ZnO are obtained.

Original language	English
Pages (from-to)	3349-3351
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	21
DOIs	https://doi.org/10.1063/1.1372339
Publication status	Published - 2001 May 21

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title = "Band alignment at a ZnO/GaN (0001) heterointerface",

abstract = "We report the experimental results of the valence band offset at a ZnO/GaN (0001) heterointerface. The ZnO/GaN (0001) heterointerface is prepared by growing a ZnO layer on (0001) GaN/Al2O3, in which the ZnO layer is epitaxially deposited by plasma-assisted molecular-beam epitaxy, while the GaN template is prepared by metalorganic chemical-vapor deposition. Ex situ ultraviolet and x-ray photoelectron spectroscopy have been used to measure the valence band offset ΔEv. The photoelectron spectroscopy measurements are done before and after Ar+ ion cleaning of the surfaces. Type-II band alignments with band offsets of ΔEv= 1.0eV (before cleaning) and 0.8 eV (after cleaning) with the valence band maximum of GaN being placed above that of ZnO are obtained.",

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T1 - Band alignment at a ZnO/GaN (0001) heterointerface

AU - Hong, Soon Ku

AU - Hanada, Takashi

AU - Makino, Hisao

AU - Chen, Yefan

AU - Ko, Hang Ju

AU - Yao, Takafumi

AU - Tanaka, Akinori

AU - Sasaki, Hiroyuki

AU - Sato, Shigeru

PY - 2001/5/21

Y1 - 2001/5/21

N2 - We report the experimental results of the valence band offset at a ZnO/GaN (0001) heterointerface. The ZnO/GaN (0001) heterointerface is prepared by growing a ZnO layer on (0001) GaN/Al2O3, in which the ZnO layer is epitaxially deposited by plasma-assisted molecular-beam epitaxy, while the GaN template is prepared by metalorganic chemical-vapor deposition. Ex situ ultraviolet and x-ray photoelectron spectroscopy have been used to measure the valence band offset ΔEv. The photoelectron spectroscopy measurements are done before and after Ar+ ion cleaning of the surfaces. Type-II band alignments with band offsets of ΔEv= 1.0eV (before cleaning) and 0.8 eV (after cleaning) with the valence band maximum of GaN being placed above that of ZnO are obtained.

AB - We report the experimental results of the valence band offset at a ZnO/GaN (0001) heterointerface. The ZnO/GaN (0001) heterointerface is prepared by growing a ZnO layer on (0001) GaN/Al2O3, in which the ZnO layer is epitaxially deposited by plasma-assisted molecular-beam epitaxy, while the GaN template is prepared by metalorganic chemical-vapor deposition. Ex situ ultraviolet and x-ray photoelectron spectroscopy have been used to measure the valence band offset ΔEv. The photoelectron spectroscopy measurements are done before and after Ar+ ion cleaning of the surfaces. Type-II band alignments with band offsets of ΔEv= 1.0eV (before cleaning) and 0.8 eV (after cleaning) with the valence band maximum of GaN being placed above that of ZnO are obtained.

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Band alignment at a ZnO/GaN (0001) heterointerface

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