Band alignments at native oxide/BaSi2 and amorphous-Si/BaSi2 interfaces measured by hard X-ray photoelectron spectroscopy

Ryota Takabe; Hiroki Takeuchi; Weijie Du; Keita Ito; Kaoru Toko; Shigenori Ueda; Akio Kimura; Takashi Suemasu

doi:10.1109/PVSC.2017.8366660

Band alignments at native oxide/BaSi₂ and amorphous-Si/BaSi₂ interfaces measured by hard X-ray photoelectron spectroscopy

Ryota Takabe, Hiroki Takeuchi, Weijie Du, Keita Ito, Kaoru Toko, Shigenori Ueda, Akio Kimura, Takashi Suemasu

Materials Development Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We fabricated native oxide/BaSi₂ and amorphous Si(a-Si, 5 nm) structures on n-Si(111) by molecular beam epitaxy and evaluated the band alignments at the interfaces by x-ray photoelectron spectroscopy in order to understand the carrier transport properties. We found that the potential barrier height of the native oxide for the minority-carriers, holes, in n-BaSi₂ is approximately 3.9 eV, whereas that of a-Si is approximately -0.2 eV. These results mean that a-Si layer is superior to the native oxide from the viewpoint of hole transport. Thanks to these band alignment, the photoresponsivity was drastically improved for the BaSi₂ capped with the a-Si layer.

Original language	English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	499-502
Number of pages	4
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366660
Publication status	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 2017 Jun 25 → 2017 Jun 30

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	17/6/25 → 17/6/30

Keywords

Hard x-ray photoelectron spectroscopy
Molecular beam epitaxy
Silicide
Surface passivation
Thin-film solar cells

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2017.8366660

Cite this

Takabe, R., Takeuchi, H., Du, W., Ito, K., Toko, K., Ueda, S., Kimura, A., & Suemasu, T. (2017). Band alignments at native oxide/BaSi₂ and amorphous-Si/BaSi₂ interfaces measured by hard X-ray photoelectron spectroscopy. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 499-502). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366660

Band alignments at native oxide/BaSi₂ and amorphous-Si/BaSi₂ interfaces measured by hard X-ray photoelectron spectroscopy. / Takabe, Ryota; Takeuchi, Hiroki; Du, Weijie et al.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 499-502 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takabe, R, Takeuchi, H, Du, W, Ito, K, Toko, K, Ueda, S, Kimura, A & Suemasu, T 2017, Band alignments at native oxide/BaSi₂ and amorphous-Si/BaSi₂ interfaces measured by hard X-ray photoelectron spectroscopy. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 499-502, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 17/6/25. https://doi.org/10.1109/PVSC.2017.8366660

Takabe R, Takeuchi H, Du W, Ito K, Toko K, Ueda S et al. Band alignments at native oxide/BaSi₂ and amorphous-Si/BaSi₂ interfaces measured by hard X-ray photoelectron spectroscopy. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 499-502. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366660

Takabe, Ryota ; Takeuchi, Hiroki ; Du, Weijie et al. / Band alignments at native oxide/BaSi₂ and amorphous-Si/BaSi₂ interfaces measured by hard X-ray photoelectron spectroscopy. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 499-502 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

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abstract = "We fabricated native oxide/BaSi2 and amorphous Si(a-Si, 5 nm) structures on n-Si(111) by molecular beam epitaxy and evaluated the band alignments at the interfaces by x-ray photoelectron spectroscopy in order to understand the carrier transport properties. We found that the potential barrier height of the native oxide for the minority-carriers, holes, in n-BaSi2 is approximately 3.9 eV, whereas that of a-Si is approximately -0.2 eV. These results mean that a-Si layer is superior to the native oxide from the viewpoint of hole transport. Thanks to these band alignment, the photoresponsivity was drastically improved for the BaSi2 capped with the a-Si layer.",

keywords = "Hard x-ray photoelectron spectroscopy, Molecular beam epitaxy, Silicide, Surface passivation, Thin-film solar cells",

author = "Ryota Takabe and Hiroki Takeuchi and Weijie Du and Keita Ito and Kaoru Toko and Shigenori Ueda and Akio Kimura and Takashi Suemasu",

note = "Funding Information: The HAXPES measurements were performed at Synchrotron X-ray station of BL15XU, at SPring-8, and were supported by NIMS microstructural characterization platform as a program of “Nanotechnology platform” (Proposal Nos, 2014A4902, 2015A4907, and 2015B4906) of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. S.U. and A.K. are grateful to HiSOR, Hiroshima University and JAEA at SPring-8 for the development of HAXPES at BL15XU. This work was financially supported by the Japan Science and Technology Agency (JST/CREST) and by a Grant-in-Aid for Scientific Research (A) (No. 15H02237) from the JSPS. R.T. was financially supported by a Grant-in-aid for JSPS Fellows (No. 15J02139). Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

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AU - Takabe, Ryota

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AU - Toko, Kaoru

AU - Ueda, Shigenori

AU - Kimura, Akio

AU - Suemasu, Takashi

N1 - Funding Information: The HAXPES measurements were performed at Synchrotron X-ray station of BL15XU, at SPring-8, and were supported by NIMS microstructural characterization platform as a program of “Nanotechnology platform” (Proposal Nos, 2014A4902, 2015A4907, and 2015B4906) of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. S.U. and A.K. are grateful to HiSOR, Hiroshima University and JAEA at SPring-8 for the development of HAXPES at BL15XU. This work was financially supported by the Japan Science and Technology Agency (JST/CREST) and by a Grant-in-Aid for Scientific Research (A) (No. 15H02237) from the JSPS. R.T. was financially supported by a Grant-in-aid for JSPS Fellows (No. 15J02139). Publisher Copyright: © 2017 IEEE.

PY - 2017

Y1 - 2017

N2 - We fabricated native oxide/BaSi2 and amorphous Si(a-Si, 5 nm) structures on n-Si(111) by molecular beam epitaxy and evaluated the band alignments at the interfaces by x-ray photoelectron spectroscopy in order to understand the carrier transport properties. We found that the potential barrier height of the native oxide for the minority-carriers, holes, in n-BaSi2 is approximately 3.9 eV, whereas that of a-Si is approximately -0.2 eV. These results mean that a-Si layer is superior to the native oxide from the viewpoint of hole transport. Thanks to these band alignment, the photoresponsivity was drastically improved for the BaSi2 capped with the a-Si layer.

AB - We fabricated native oxide/BaSi2 and amorphous Si(a-Si, 5 nm) structures on n-Si(111) by molecular beam epitaxy and evaluated the band alignments at the interfaces by x-ray photoelectron spectroscopy in order to understand the carrier transport properties. We found that the potential barrier height of the native oxide for the minority-carriers, holes, in n-BaSi2 is approximately 3.9 eV, whereas that of a-Si is approximately -0.2 eV. These results mean that a-Si layer is superior to the native oxide from the viewpoint of hole transport. Thanks to these band alignment, the photoresponsivity was drastically improved for the BaSi2 capped with the a-Si layer.

KW - Hard x-ray photoelectron spectroscopy

KW - Molecular beam epitaxy

KW - Silicide

KW - Surface passivation

KW - Thin-film solar cells

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